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학술연구/단체지원/교육 등 연구자 활동을 지속하도록 DBpia가 지원하고 있어요.
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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한국진공학회(ASCT) Journal of Korean Vacuum Science & Technology Journal of Korean Vacuum Science & Technology Vol.3 No.2
- 발행연도
- 1999.10
- 수록면
- 139 - 144 (6page)
이용수
초록· 키워드
오류제보하기
Hydrogen concentration depth profiles in homoepitaxial Si(001) films grown from hyperthermal Si beams generated by ultrahigh vacuum (UHV) ion-beam sputtering have been measured by nuclear reaction analyses as a function of film growth temperature and deposition rate. Bulk H concentrations C_H in the crystalline Si layers were found to be below detection limits, ?l×10^(19) ㎝-³, with no indication of significant H surface segregation at the crystalline/amorphous interface region. This is quite different than the case for growth by molecular-beam epitaxy (MBE) where strong surface segregation was observed for similar deposition conditions with average C_H values of ?5x10^(19) ㎝-³ in the crystalline/amorphous interface region and ?10^(20) ㎝-³ in the amorphous overlayer. The markedly decreased H concentrations in the present experiments are due primarily to hydrogen desorption by incident hyperthermal Si atoms. Reduced H surface coverages during growth combined with collisionally-induced filling of interisland trenches and enhanced interlayer mass transport provide an increase in critical epitaxial thicknesses by up to an order of magnitude over previous MBE results.
목차
Abstract
Ⅰ. Introduction
Ⅱ. Experimental procedure
Ⅲ. Results and discussion
Ⅳ. Conclusions
Acknowledgements
References
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