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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한국진공학회(ASCT) Journal of Korean Vacuum Science & Technology Journal of Korean Vacuum Science & Technology Vol.1 No.1
- 발행연도
- 1997.6
- 수록면
- 30 - 37 (8page)
이용수
초록· 키워드
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Interactions of Cu films with Si substrates separated by thin layers of molybdenum and molybdenum nitride Were investigated in the viewpoint of diffusion barrier to copper. The diffusion barrier behavior of the layers was studied as functions of deposition and annealing conditions by cross-sectional transmission electron microscopy and Nomarski microscopy. The layers deposited at N₂ gas ratios of 0.4 and 0.5 exhibited good diffusion barrier behaviors up to 700℃, mainly due to the phase transformation of molybdenum to γ-Mo₂N phase. The increase in the N₂ gas ratio in deposition elevates the lower limit of barrier failure temperature. Furthermore, amorphous molybdenum nitride films deposited at 200℃ and 300℃ did not fail, while the crystalline γ-Mo₂N films deposited at 400℃ and 500℃ showed signs of interlayer interactions between Cu and Si after annealing at 750℃ for 30 minutes. Therefore, the amorphous nature of the molybdenum nitride layer enhanced its ability to reduce Cu diffusion and its stability as a diffusion barrier at elevated temperatures.
목차
Abstract
Ⅰ. Introduction
Ⅱ. Experimental
Ⅲ. Results and Discussion
Ⅳ. Conclusions
References
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