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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한국전기전자재료학회 Transactions on Electrical and Electronic Materials Transactions on Electrical and Electronic Materials 제4권 제6호
- 발행연도
- 2003.1
- 수록면
- 9 - 12 (4page)
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초록· 키워드
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The electrical properties of stabilized amorphous selenium typical of the material used in direct conversion x-ray imaging devices are reported. Carrier mobility was measured using time-of-flight (TOF) measurements to investigate the transport properties of holes and electrons in stabilized a-Se film. A laser beam with pulse duration of 5 ns and wavelength of 350 nm was illuminated on the surface of a-Se with thickness of 400 mm. The photo induced signals of a-Se film as a function of time were measured. The measured transit times of hole and electron were about 8.73 ms and 229.17 ms, respectively. The hole and electron drift mobilities decreases with increase of electric field up to 4 V/mm. Above 4 V/mm, the measured drift mobilities exhibited no observable dependence with respect to electric field. The experimental results showed that the hole and electron drifting mobility were 0.04584 cm2V-1s-1 and 0.00174 cm2V-1s-1 at 10 V/mm.
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