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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- Korean Society for Precision Engineering International Journal of Precision Engineering and Manufacturing International Journal of Precision Engineering and Manufacturing Vol.7 No.2
- 발행연도
- 2006.4
- 수록면
- 52 - 55 (4page)
이용수
초록· 키워드
오류제보하기
The OLEDs(Organic Light-Emitting Diodes) structure organizes the bottom layer using glass, ITO(indium thin oxide), hole injection layer, hole transport layer, emitting material layer, electron transport layer, electron injection layer and cathode using metal. OLED has various advantages. OLEDs research has been divided into structural side and emitting material side. The amount of emitting light and luminescence efficiency has been improved by continuing effort for emitting material layer. The emitting light mechanism of OLEDs consists of electrons and holes injected from cathode and anode recombination in emitting material layer. The mobilities of injected electrons and holes are different. The mobility of holes is faster than that of electrons. In order to get high luminescence efficiency by recombine electrons and holes, the balance of their mobility must be set. The more complex thin film structure of OLED becomes, the more understanding about physical phenomenon in each interface is needed. This paper observed what the thickness change of hole transport layer has an affection through the below experiments. Moreover, this paper uses numerical analysis about carrier transport layer thickness change on the basis of these experimental results that agree with simulation results.
목차
1. Introduction
2. Experiment
3. Simulation
4. Results
5. Discussions
ACKNOWLEDGEMENT
REFERENCES
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