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- 한국전기전자재료학회 Transactions on Electrical and Electronic Materials Transactions on Electrical and Electronic Materials 제16권 제2호
- 발행연도
- 2015.1
- 수록면
- 99 - 102 (4page)
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Thin film transistors (TFTs) with amorphous 2 wt% silicon-doped zinc tin oxide (a-2SZTO) channel layer werefabricated using an RF magnetron sputtering system, and the effect of post-annealing treatment time on thestructural and electrical properties of a-2SZTO systems was investigated. It is well known that Si can effectively reducethe generation of oxygen vacancies. However, it is interesting to note that prolonged annealing could have a badeffect on the roughness of a-2SZTO systems, since the roughness of a-2SZTO thin films increases in proportion to thethermal annealing treatment time. Thermal annealing can control the electrical characteristics of amorphous oxidesemiconductor (AOS) TFTs. It was observed herein that prolonged annealing treatment can cause bumpy roughness,which led to increase of the contact resistance between the electrode and channel. Thus, it was confirmed thatdeterioration of the electrical characteristics could occur due to prolonged annealing. The longer annealing time alsodecreased the field effect mobility. The a-2SZTO TFTs annealed at 500℃ for 2 hours displayed the mobility of 2.17 cm2/Vs. As the electrical characteristics of a-2SZTO annealed at a fixed temperature for long periods were deteriorated,careful optimization of the annealing conditions for a-2SZTO, in terms of time, should be carried out to achieve betterperformance.
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참고문헌 (11)
참고문헌 신청
/ / [DOI : http : //dx. doi. org/10. 1063/1
Eugene Chong / 2013 / First-principle study of amorphous SiZnSnO thin-film transistor with excellent stability / Thin Solid Films 534 : 609 ~ 613
G.K. Reeves / 1982 / Obtaining the specific contact resistance from transmission line model measurements / IEEE Electron Device Letters 3 (5) : 111 ~ 113
Hyoungseok Choi / 2014 / Effect of Wet Annealing on the Device Stability of SiZnSnO Thin Film Transistors / Journal of Nanoelectronics and Optoelectronics 9 (1) : 54 ~ 56
I. Kang / 2012 / / Current Appl. Phys. 12 : S12 ~
G.K. Reeves / 1982 / Obtaining the specific contact resistance from transmission line model measurements / IEEE Electron Device Letters 3 (5) : 111 ~ 113
Hyoungseok Choi / 2014 / Effect of Wet Annealing on the Device Stability of SiZnSnO Thin Film Transistors / Journal of Nanoelectronics and Optoelectronics 9 (1) : 54 ~ 56
I. Kang / 2012 / / Current Appl. Phys. 12 : S12 ~
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