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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한국전기전자재료학회 Transactions on Electrical and Electronic Materials Transactions on Electrical and Electronic Materials 제8권 제3호
- 발행연도
- 2007.1
- 수록면
- 139 - 142 (4page)
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초록· 키워드
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Organic field-effect transistor (FET) based on a copper Phthalocyanine (CuPc) material as an active layer and a SiO2 as a gate insulator were fabricated and analyzed. We measured the typical FET characteristics of CuPc in air. The electrical characteristics of the CuPc FET device were analyzed by a Maxwell-Wagner model. The Maxwell-Wagner model employed in analyzing double-layer dielectric system was helpful to explain the C-V and I-V characteristics of the FET device. In order to further clarity the channel formation of the CuPc FET, optical second harmonic generation (SHG) measurement was also employed. Interestingly, SHG modulation was not observed for the CuPc FET. This result indicates that the accumulation of charge from bulk CuPc makes a significant contribution.
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등록된 정보가 없습니다.
참고문헌 (7)
참고문헌 신청
/ 2003 / Thin-film Transistors, Marcel Dekker
/ 2006 / Analysis of pentacene FET characteristics based on Maxwell-wagner model 48 : 1418 ~
/ 2006 / Control of the nano electrostatic phenomena at a pentacene/metal interface for improvement of the organic FET devices 499 : 386 ~
/ 2006 / Maxwell-wagner model analysis for the capacitance-voltage characteristics of pentacene field effect transistor 45 : 3712 ~
/ 2006 / Modulation in optical second harmonic generation signal from channel of pentacene field effect transistors during device operation 87 (222107)
/ 2006 / Analysis of pentacene FET characteristics based on Maxwell-wagner model 48 : 1418 ~
/ 2006 / Control of the nano electrostatic phenomena at a pentacene/metal interface for improvement of the organic FET devices 499 : 386 ~
/ 2006 / Maxwell-wagner model analysis for the capacitance-voltage characteristics of pentacene field effect transistor 45 : 3712 ~
/ 2006 / Modulation in optical second harmonic generation signal from channel of pentacene field effect transistors during device operation 87 (222107)
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