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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 대한전자공학회 JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE Journal of Semiconductor Technology and Science Vol.18 No.2
- 발행연도
- 2018.4
- 수록면
- 131 - 138 (8page)
- DOI
- 10.5573/JSTS.2018.18.2.131
이용수
초록· 키워드
오류제보하기
Based on the drain-avalanche-hot-carrier (DAHC-) mechanism, a stress-bias-dependent oncurrent model is proposed for 70-nm p-channel metaloxide-semiconductor field-effect transistors (PMOSFETs) by using only one device parameter: channel length variation (ΔL<SUB>ch</SUB>). The proposed model describes the influence of drain and gate stress bias on the oncurrent of PMOSFETs successfully. It is a simple and effective method of predicting the on-current variation for more reliable circuit operation.
목차
Abstract
I. INTRODUCTION
II. EXPERIMENTAL CONDITIONS AND MODELING REGION
III. MODELING PROCESS
IV. MODEL VERIFICATION
V. CONCLUSIONS
REFERENCES
참고문헌 (13)
참고문헌 신청
M. M. Waldrop, “More than Moore,” Nature, vol. 530, no. 7589, pp. 144-147, Feb. 2016.
C. Hu, “Future CMOS Scaling and Reliability,” Proceedings of The IEEE, vol. 81, no. 5, pp. 682- 689, May. 1993.
E. Takeda, Y. Nakagome, H. Kume, and S. Asai, New hot-carrier injection and device degradation in submicron MOSFETs, Proc. Inst. Elec. Eng., vol. 130, no.3, pp. 144-150, June. 1983.
Y-S. Chen, T-H. Tang, and S-L. Jang, “Modeling of hot-carrier-stressed characteristics of nMOSFETs,” Solid State Electronics, vol. 39, no. 7, pp. 75-81, Jan. 1996.
M. Koyanagi, et al, “Hot-Electron-Induced Punchthrough (HEIP) Effect in Submicrometer PMOSFET’s,” IEEE Transactions on Electron Devices, Vol. ED-34, No. 4, Apr. 1987.
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