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초록· 키워드
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In this study, the sensitivity of an active pixel sensor (APS) was adjusted by employing a gate/body-tied (GBT) p-channel metal-oxide semiconductor field-effect transistor (PMOSFET)-type photodetector with a transfer gate. A GBT PMOSFET-type photodetector can amplify the photocurrent generated by light. Consequently, APSs that incorporate GBT PMOSFET-type photodetectors are more sensitive than those APSs that are based on p-n junctions. In this study, a transfer gate was added to the conventional GBT PMOSFET-type photodetector. Such a photodetector can adjust the sensitivity of the APS by controlling the amount of charge transmitted from the drain to the floating diffusion node according to the voltage of the transfer gate. The results obtained from conducted simulations and measurements corroborate that, the sensitivity of an APS, which incorporates a GBT PMOSFET-type photodetector with a built-in transfer gate, can be adjusted according to the voltage of the transfer gate. Furthermore, the chip was fabricated by employing the standard 0.35 μm complementary metal-oxide semiconductor (CMOS) technology, and the variable sensitivity of the APS was thereby experimentally verified.
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참고문헌 (13)
참고문헌 신청
R. H. Nixon / 1996 / 256 × 256 CMOS active pixel sensor cameraon-a-chip / IEEE J. Solid-State Circuits 31(12):2046~2050
E. R. Fossum / 1997 / CMOS image sensors : electronic cameraon-a-chip / IEEE Trans. Electron Devices 44(10):1689~1698
M. Bigas / 2006 / Review of CMOS image sensors / Microelectronics J. 37(5):433~451
김상환 / 2021 / Gate/Body-Tied 구조의 고감도 광검출기를 이용한 2500 fps 고속 바이너리 CMOS 이미지센서 / 센서학회지 30(1):61~65
H. Alaibakhsh / 2018 / Analytical Modeling of Pinning Process in Pinned Photodiodes / IEEE Trans. Electron Devices 65(10):4262~4368
E. R. Fossum / 1997 / CMOS image sensors : electronic cameraon-a-chip / IEEE Trans. Electron Devices 44(10):1689~1698
M. Bigas / 2006 / Review of CMOS image sensors / Microelectronics J. 37(5):433~451
김상환 / 2021 / Gate/Body-Tied 구조의 고감도 광검출기를 이용한 2500 fps 고속 바이너리 CMOS 이미지센서 / 센서학회지 30(1):61~65
H. Alaibakhsh / 2018 / Analytical Modeling of Pinning Process in Pinned Photodiodes / IEEE Trans. Electron Devices 65(10):4262~4368
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