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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 대한전자공학회 JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE Journal of Semiconductor Technology and Science Vol.13 No.5
- 발행연도
- 2013.10
- 수록면
- 522 - 529 (8page)
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초록· 키워드
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In this paper, simple but very effective techniques to suppress subthreshold hump effect for high-voltage (HV) complementary metal-oxidesemiconductor (CMOS) technology are presented. Two methods are proposed to suppress subthreshold hump effect using a simple layout modification approach. First, the uniform gate oxide method is based on the concept of an H-shaped gate layout design. Second, the gate work function control method is accomplished by local ion implantation. For our experiments, 0.18 μm 20 V class HV CMOS technology is applied for HV MOSFETs fabrication. From the measurements, both proposed methods are very effective for elimination of the inverse narrow width effect (INWE) as well as the subthreshold hump.
목차
Abstract
I. INTRODUCTION
II. DEVICE STRUCTURE AND FABRICATION
III. EXPERIMENTAL RESULTS AND DISCUSSION
V. CONCLUSIONS
REFERENCES
참고문헌 (19)
참고문헌 신청
1. [학술대회논문] - R. A. Bianchi / 2008 / High voltage devices integration into advanced CMOS technologies / IEDM Tech. Dig. : 137 ~ 140
2. [학술대회논문] - K. Benaissa / 2010 / New cost-effective integration schemes enabling analog and highvoltage design in advanced CMOS SOC technologies / Proc. Symp. VLSI Tech. Dig. : 221 ~ 222
3. [학술대회논문] - T. Uhlig / 2007 / A18 - a novel 0.18 μm smart power SOC IC technology for automotive applications / Proc. of 19th ISPSD : 237 ~ 240
4. [학술지(정기간행물)] - L. A. Akers / 1986 / The inverse-narrow-width effect / IEEE Trans. Electron Device ED-7 (7) : 419 ~ 421
5. [학술지(정기간행물)] - T. Oishi / 2000 / Isolation edge effect depending on gate length of MOSFET’s with various isolation structures / IEEE Trans. Electron Devices 47 (4) : 822 ~ 827
2. [학술대회논문] - K. Benaissa / 2010 / New cost-effective integration schemes enabling analog and highvoltage design in advanced CMOS SOC technologies / Proc. Symp. VLSI Tech. Dig. : 221 ~ 222
3. [학술대회논문] - T. Uhlig / 2007 / A18 - a novel 0.18 μm smart power SOC IC technology for automotive applications / Proc. of 19th ISPSD : 237 ~ 240
4. [학술지(정기간행물)] - L. A. Akers / 1986 / The inverse-narrow-width effect / IEEE Trans. Electron Device ED-7 (7) : 419 ~ 421
5. [학술지(정기간행물)] - T. Oishi / 2000 / Isolation edge effect depending on gate length of MOSFET’s with various isolation structures / IEEE Trans. Electron Devices 47 (4) : 822 ~ 827
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