A New Analytical Model for Channel Thermal Noise of Deep-submicron RF MOSFETs

Jongwook Jeon ,  Yujo Yun ,  Y.W. Kim 외 1명

대한전자공학회 ISOCC

2006 .10

Deep submicron PMOSFET의 Scaling 방법

장성준 ,  김용택 ,  유종근 외 3명

대한전자공학회 학술대회

1995 .12

Deep Submicron PMOSFET의 Scaling 방법 ( Scaling Methodology of Deep Submicron P-MOSFET )

장성준 ,  김용택 ,  유종근 외 3명

대한전자공학회 학술대회

1995 .11

Hydrodynamic model을 이용한 Submicron MOSFET의 Simulation ( Simulation of Submicron MOSFET Using Hydrodynamic Model )

김충원 ,  한백형 ,  김경석

전자공학회논문지-A

1993 .11

DEEP SUBMICRON CMOS TECHNOLOGY AND DESIGN CHALLENGES

Bijan Dava ,  i

ICVC : International Conference on VLSI and CAD

1989 .01

TEMPERATURE DEPENDENCE OF THRESHOLD VOLTAGE FOR SUBMICRON P-AND N-CHANNEL LDD MOSFET DEVICES

Seog-Ju Oh

ICEIC : International Conference on Electronics, Informations and Communications

1993 .08

Temperature Dependence of Threshold Voltage for Submicron P- and N- Channel LDD MOSFET Devices

Seog Ju Oh

International Conference on Electronics, Informations and Communications

1993 .01

Deep Submicron MOSFET에서 저온공정의 Inter-Layer-Dielectric 막이 게이트 산화막의 특성에 미치는 효과 ( Effects of Low Temperature Interlayer Dieletric Films on the Gate Quality of Deep Submicron MOSEFTS )

이상기 ,  황현상 ,  이영종 외 4명

대한전자공학회 워크샵

1997 .01

서브마이크론 p-MOSFET에서 스트레스로 유기된 핫 캐리어 효과 ( Stress Induced Hot Carrier Effect in Submicron p-MOSFET ` s )

이용재 ,  Dim Lee Kwong

대한전자공학회 학술대회

1992 .11

Effects of Low Temperature Interlayer Dielectric Films on the Oxide Reliability and Hot Carrier Immunity of Deep Submicron MOSFET`s

이상기 ,  Hi Deok Lee ,  Young Jong Lee 외 3명

ICVC : International Conference on VLSI and CAD

1997 .01

Numerical Simulation of Hot-Carrier Gate and Injection Current in Deep-Submicron Thin-Film SOI / MOSFET Using Exact Field Distribution

Jain Min Cao ,  Chuan Liang Wu ,  Wen Zheng Shen 외 3명

ICVC : International Conference on VLSI and CAD

1997 .01

Short-Channel MOSFET의 해석적 모델링 ( Analytical Modeling for the short-channel MOSFET )

홍순석

한국통신학회논문지

1992 .11

Two-Dimensional Non-local Impact Ionization Model for the Calculation of Substrate Current in Submicron SI MOSFET`s

Joon Woo Nam ,  Ting Wei Tang

ICVC : International Conference on VLSI and CAD

1997 .01

Electrical properties and thermal stability of Al/$WN_x$/Ti submicron contact structure

Kim ,  Yong-Tae ,  Sim 외 3명

한국반도체및디스플레이장비학회 학술대회

2002 .01

Analytic Threshold Voltage Model of Recessed Channel MOSFETs

Yongmin Kwon ,  Yeonsung Kang ,  Sanghoon Lee 외 3명

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE

2010 .03

The Characterizing Analysis of a Buried-Channel MOSFET based on the 3-D Numerical Simulation

Man-Ho Kim ,  Jongsoo Kim

Journal of Electrical Engineering & Technology

2007 .06

SUBMICRON DEVICE RELIABILITY RESEARCH

Chenming Hu

ICVC : International Conference on VLSI and CAD

1989 .01

전력 MOSFET

崔然益

전기의세계

1985 .05

Lower Power Channel Routing by Crosstalk Minimization for Deep Submicron VLSI Design

Su-Hyun Nam ,  Jun-Dong Cho

Journal of Electrical Engineering and information Science

1999 .12

Submicron Gate Structure의 신뢰성 및 노화현상에 관한 연구 ( Reliability and Degradation Phenomena of Submicron Gate Structure )

이명복 ,  이정일 ,  강광남

특정연구 결과 발표회 논문집

1989 .01