Investigation of stacked tunnel barrier with high-k materials for application to non-volatile memory devices

김민수 ,  김관수 ,  유희욱 외 6명

한국진공학회 학술발표회초록집

2009 .02

Characterization of Low Stress Silicon Nitride for Stacked structure application

Kyoung Pil Na ,  So-Yeon Pa ,  k 외 2명

한국진공학회 학술발표회초록집

2009 .08

Effect of heat treatment on HfO₂ charge trapping layer for engineered tunnel barrier non-volatile memory

박군호 ,  김관수 ,  정명호 외 4명

한국진공학회 학술발표회초록집

2009 .02

Improved memory characteristics using high-k materials for charge trap layer and engineered tunnel barrier

김민수 ,  김관수 ,  유희욱 외 6명

한국진공학회 학술발표회초록집

2009 .02

Electrical characteristics of SiC thin film charge trap memory with barrier engineered tunnel layer

Dong Seok Han ,  Dong Uk Lee ,  Hyo Jun Lee 외 3명

한국진공학회 학술발표회초록집

2010 .08

Investigating InSnZnO as an active layer for non-volatile memory devices and increasing memory window by utilizing Silicon-rich SiO_x for charge storage layer

Heejun PARK ,  Kyungsoo JANG ,  Thuy THANH 외 3명

한국진공학회 학술발표회초록집

2016 .08

Complete Tunneling of Light via Local Barrier Modes in A Composite Barrier with Metamaterials

Kyoung-Youm Kim ,  Saehwa Kim

Current Optics and Photonics

2008 .12

Investigating InSnZnO as an Active Layer for Non-volatile Memory Devices and Increasing Memory Window by Utilizing Silicon-rich SiOx for Charge Storage Layer

Heejun Pa ,  k ,  Cam Phu Thi Nguyen 외 4명

한국진공학회 학술발표회초록집

2016 .02

Reactions between silicon precursors and surface sites during atomic layer deposition of silicon nitride

Luchana L. YUSUP ,  Jae-Min PARK ,  Ti 외 5명

한국진공학회 학술발표회초록집

2016 .08

Density Functional Theory Study of Silicon Chlorides for Atomic Layer Deposition of Silicon Nitride Thin Films

Luchana L. Yusup ,  Sung-Joo Woo ,  Jae-Min Pa 외 2명

한국진공학회 학술발표회초록집

2014 .02

Effects of defect levels and bandgap engineering of charge storage layer on switching and retention characteristics of a-InSnZnO nonvolatile memory devices

Sojin LEE ,  Kyungsoo JANG ,  Heejun PARK 외 2명

한국진공학회 학술발표회초록집

2016 .08

Improvement of the programming and erasing characteristics of non-volatile memory devices using carbon oxide tunneling layer with low interface trap density

Sojin LEE ,  Kyungsoo JANG ,  Cam Phu THI NGUYEN 외 2명

한국진공학회 학술발표회초록집

2016 .08

Increasing P/E Speed and Memory Window by Using Si-rich SiOx for Charge Storage Layer to Apply for Non-volatile Memory Devices

김태용 ,  Phu Thi Nguyen ,  김지웅 외 1명

한국진공학회 학술발표회초록집

2014 .02

Improvement of Storage Layer Characteristics Using Si-rich SiOx Layer for Non-Volatile Memory Devices

김태용 ,  김지웅 ,  이준신

한국진공학회 학술발표회초록집

2014 .08

Staggered Tunnel Barrier engineered Memory

손정우 ,  박군호 ,  조원주

한국진공학회 학술발표회초록집

2010 .02

Electrical properties of floating gate memory devices dependent on the thickness of tunneling layer

O. H. Gwon ,  J. Y. Kim ,  S . J. Kang 외 1명

한국진공학회 학술발표회초록집

2019 .08

Thermal Treatment Effects of Staggered Tunnel Barrier(Si3N4/Ta2O5) for Non Volatile Memory Applications

이동현 ,  조원주

한국진공학회 학술발표회초록집

2012 .02

Computer-simulation with Different Types of Bandgap Profiling for Amorphous Silicon Germanium Thin Films Solar Cells

조재현 ,  이준신

한국진공학회 학술발표회초록집

2014 .02

Formation of Graphene-Seeds on Silicon Nitride Using Chemical Vapor Deposition

강도연 ,  박세근 ,  이준영 외 4명

한국진공학회 학술발표회초록집

2015 .02

Behaviour of nitrided layer formed on S45C carbon steel during gaseous nitriding

손석원 ,  유광춘 ,  이원범

한국진공학회 학술발표회초록집

2016 .02