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연구자들이 자신의 연구와 전문성을 널리 알리고, 새로운 협력의 기회를 만들 수 있는 네트워킹 공간이에요.
논문 기본 정보
- 자료유형
- 학술대회자료
- 저자정보
- 발행연도
- 1992.10
- 수록면
- 81 - 91 (11page)
이용수
초록· 키워드
오류제보하기
Prototype high efficiency solar cells are the final product of the fundamental and applied research done at the LPSES on the physics of semiconductor thin films. The epitaxial methodes available are MBE, MOMBE, MOVPE, VPE and the now dropped LPE.
The final project is a quadrispectral photovoltaic structure with four Ⅲ-Ⅴ semiconductors arranged in two monolithic tandems : one grown on a GaAs substrate (AlGaIn)P/GaAs with energy gaps of 1.9 and 1.43 eV gaps and one grown on an InP substrate (GaIn)(AsP)/(GaIn)As with 1.04 and 0.7 eV gaps respectively.
The 1 AMO efficiencies obtained at the LPSES for these individual cells so far are 22% (GaAs), 4 % (GaIn)(AsP), 8 % (GaIn)As for the two last cells the sunlight was filtered by a GaAs cell. The relatively low efficiency of the (GaIn)(AsP) cell is due to great difficulties in growing a quaternary alloy by LPE. Stacking and monolithic integration of these cells is under progress.
The final project is a quadrispectral photovoltaic structure with four Ⅲ-Ⅴ semiconductors arranged in two monolithic tandems : one grown on a GaAs substrate (AlGaIn)P/GaAs with energy gaps of 1.9 and 1.43 eV gaps and one grown on an InP substrate (GaIn)(AsP)/(GaIn)As with 1.04 and 0.7 eV gaps respectively.
The 1 AMO efficiencies obtained at the LPSES for these individual cells so far are 22% (GaAs), 4 % (GaIn)(AsP), 8 % (GaIn)As for the two last cells the sunlight was filtered by a GaAs cell. The relatively low efficiency of the (GaIn)(AsP) cell is due to great difficulties in growing a quaternary alloy by LPE. Stacking and monolithic integration of these cells is under progress.
목차
ABSTRACT
INTRODUCTION
EPITAXIAL METHODS AT THE LPSES
PHOTOVOLTAIC STRUCTURES
CHARACTERIZATION METHODS
FIELD OF APPLICATIONS OF HIGH EFFICIENCY PHOTOVOLTAIC CELLS
PROJECTS
Reference
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