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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한국진공학회(ASCT) Applied Science and Convergence Technology Applied Science and Convergence Technology Vol.33 No.5
- 발행연도
- 2024.9
- 수록면
- 152 - 155 (4page)
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초록· 키워드
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Plasma pre-treatment using NH₃ and N₂O gases was conducted prior to deposition of a SiN passivation layer to compare and analyze the impact of each plasma gas on the device characteristics of AlGaN/GaN high electron mobility transistors (HEMTs). Surface analyses were performed through atomic force microscopy, X-ray photoelectron spectroscopy (XPS), and transmission electron microscopy. A systematic investigation confirmed improvements in surface quality, with the most significant enhancement observed after NH₃ plasma treatment. In particular, XPS analysis provided insights into these improvements, highlighting the effective oxide removal capability of NH₃ plasma. Additionally, direct current and frequency dispersion analyses through capacitance measurements confirmed that the device characteristics were enhanced after plasma treatment. The plasma treatment using NH₃ gas thus was very effective for improving the surface quality in AlGaN/GaN HEMTs.
목차
ABSTRACT
1. Introduction
2. Experimental details
3. Results and discussion
4. Conclusions
References
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