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논문 기본 정보

자료유형
학술저널
저자정보
Dokyun Kim (Seoul National University) Unggi Kim (Seoul National University) Sungjae Choi (Seoul National University) Young-Chang Joo (Seoul National University)
저널정보
대한금속·재료학회 Electronic Materials Letters Electronic Materials Letters Vol.20 No.5
발행연도
2024.9
수록면
525 - 536 (12page)
DOI
https://doi.org/10.1007/s13391-024-00509-9

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Physical observation of electrochemical metallization (ECM) channel is required for understanding the electrical characteristicsof ECM memristors. Although numerous studies have explored to identify the ECM channels, the majority ofapproaches have been limited to in-situ systems and localized areas, lacking a comprehensive demonstration of their fi ndings. This study focuses on interpreting the diff erent electrical characteristics of ECM memristors through identifi cationof ECM channels using a new method inspired by etch pit detection on Si surface for determining copper contamination. Atomic Force Microscopy (AFM), Scanning Electron Microscopy (SEM), and Transmission Electron Microscopy (TEM)were utilized to detect and analyze conductive channels within the switching medium after real operation. Interestingly,devices with insulating amorphous carbon (a-C) as medium layer exhibited multiple channels, while devices with semiconductinga-C layers showed a single channel in the on-state. Furthermore, devices with a single channel demonstratedmore uniform switching parameters, including high resistance state and set voltage, compared to devices with multiplechannels. However, devices with multiple channels exhibited better retention properties .In addition, intermetallic conductivechannels were confi rmed, resulting from the mixing of Cu active metal ions with the Pt bottom electrode in high currentdensity conditions. The fi ndings of this work provide valuable insights into interpreting ECM memristor performancebased on the formation of channels and inspire device design strategies for improving device performance.

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