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논문 기본 정보
- 자료유형
- 학술대회자료
- 저자정보
- 발행연도
- 2024.6
- 수록면
- 528 - 531 (4page)
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초록· 키워드
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In recent years, there has been a surge in research exploring the use of materials such as graphene to mitigate surface oxidation in metals like copper (Cu) and nickel (Ni). This approach holds significant promise, particularly in the realm of semiconductor technology, where the prevention of oxide formation on metal surfaces is crucial for ensuring device performance and reliability. One particular area of interest lies in the application of these materials to replace conventional plasma processes for the reductive removal of Cu metal
oxide layers in heterojunction semiconductor systems. Such systems rely on the seamless integration of disparate materials, making the prevention of oxide formation a critical consideration. However, the incorporation of alternative materials, such as graphene, onto Cu surfaces introduces a new set of challenges, notably in the realm of contact resistance. Understanding and mitigating the impact of graphene incorporation on contact resistance are imperative for the successful implementation of this approach in practical applications. Therefore, in this study, we delve into the intricate details of contact resistance analysis in Cu-graphene. By bridging the gap between materials science and semiconductor technology, this research paves the way for the development of more efficient and reliable heterogeneous integration processes. Moreover, the knowledge gained from this study can potentially inform the design of novel materials and interfaces tailored for next-generation semiconductor devices.
oxide layers in heterojunction semiconductor systems. Such systems rely on the seamless integration of disparate materials, making the prevention of oxide formation a critical consideration. However, the incorporation of alternative materials, such as graphene, onto Cu surfaces introduces a new set of challenges, notably in the realm of contact resistance. Understanding and mitigating the impact of graphene incorporation on contact resistance are imperative for the successful implementation of this approach in practical applications. Therefore, in this study, we delve into the intricate details of contact resistance analysis in Cu-graphene. By bridging the gap between materials science and semiconductor technology, this research paves the way for the development of more efficient and reliable heterogeneous integration processes. Moreover, the knowledge gained from this study can potentially inform the design of novel materials and interfaces tailored for next-generation semiconductor devices.
목차
Abstract
Ⅰ. 서론
Ⅱ. 본론
Ⅲ. 결론 및 향후 연구 방향
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