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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한국전기전자재료학회 Transactions on Electrical and Electronic Materials Transactions on Electrical and Electronic Materials 제22권 제4호
- 발행연도
- 2021.8
- 수록면
- 459 - 466 (8page)
- DOI
- https://doi.org/10.1007/s42341-020-00250-8
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초록· 키워드
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In this paper, we performed a Pseudo-morphic High Electron Mobility Transistors (pHEMT) In0.3 Al0.7 As/InAs/InSb/In0.3 Al0.7 using Silvaco-TCAD. RF and analog electrical characteristics are assessed under high temperature eff ect. The impact of the temperature is evaluated referring to a device at room temperature. In particular, the threshold voltage ( V th ), transconductance ( g m ), and I on / I off ratio are calculated in the temperature range of 300 K to 700 K. The primary device exhibits a drain current of 950 mA, a threshold voltage of ?1.75 V, a high value of transconductance g m of 650 mS/mm, I on / I off ratio of 1 × 10 6 , a transition frequency ( f t ) of 790 GHz, and a maximum frequency ( f max ) of 1.4 THZ. The achieved results show that increasing temperature act to decrease current, reduce g m , and I on / I off ratio. In more detail high temperature causes a phonon scattering mechanism happening that determine in turn a reduced drain current and shift positively the threshold voltage resulting in hindering the device DC/AC capability.
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참고문헌 (10)
참고문헌 신청
R. Chau / 2005 / Benchmarking nanotechnology for high-performance and low-power logic transistor applications / IEEE Trans. Nanotechnol 4(2):153~158
Mohammed Khaouani / 2018 / Low-Power and High-Frequency 14-nm In0.53Ga0.47As Vertical Rectangular Gate-All-Around MOSFETs / Transactions on Electrical and Electronic Materials 19(5):337~343
N. Waldron / 2010 / A self-aligned InGaAs HEMT architecture for logic applications / IEEE Trans. Electron Devices 57(1):297~304
C. Kumar / 2004 / Synthesis and characterization of S-Au interaction in gold nanoparticle bound polymeric beads / J. Nanoparticle Res 6(4):369~376
A. Pérez-Tomás / 2011 / AlGaN/GaN hybrid MOS-HEMT analytical mobility model / Solid-State Electron 56(1):201~206
Mohammed Khaouani / 2018 / Low-Power and High-Frequency 14-nm In0.53Ga0.47As Vertical Rectangular Gate-All-Around MOSFETs / Transactions on Electrical and Electronic Materials 19(5):337~343
N. Waldron / 2010 / A self-aligned InGaAs HEMT architecture for logic applications / IEEE Trans. Electron Devices 57(1):297~304
C. Kumar / 2004 / Synthesis and characterization of S-Au interaction in gold nanoparticle bound polymeric beads / J. Nanoparticle Res 6(4):369~376
A. Pérez-Tomás / 2011 / AlGaN/GaN hybrid MOS-HEMT analytical mobility model / Solid-State Electron 56(1):201~206
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