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논문 기본 정보

자료유형
학술저널
저자정보
저널정보
한국광학회 Current Optics and Photonics Journal of the Optical Society of Korea Vol.20 No.1
발행연도
2016.2
수록면
130 - 134 (5page)

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The influence of Au/Ni-based contact formed on a lightly-doped (7.3×1017cm-3, Zn-doped) InGaAsP layerfor electrical compensation of surface plasmon polariton (SPP) propagation under various rapid thermalannealing (RTA) conditions has been studied. The active control of SPP propagation is realized byelectrically pumping the InGaAsP multiple quantum wells (MQWs) beneath the metal planar waveguide. The metal planar film acts as the electric contact layer and SPP waveguide, simultaneously. The RTAprocess can lower the metal-semiconductor electric contact resistance. Nevertheless, it inevitably increasesthe contact interface morphological roughness, which is detrimental to SPP propagation. Based on thisdilemma, in this work we focus on studying the influence of RTA conditions on electrical control of SPPs. The experimental results indicate that there is obvious degradation of electrical pumping compensationfor SPP propagation loss in the devices annealed at 400oC compared to those with no annealing treatment. With increasing annealing duration time, more significant degradation of the active performance is observedeven under sufficient current injection. When the annealing temperature is set at 400oC and the durationtime approaches 60s, the SPP propagation is nearly no longer supported as the waveguide surfacemorphology is severely changed. It seems that eutectic mixture stemming from the RTA process significantlyincreases the metal film roughness and interferes with the SPP signal propagation.

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