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논문 기본 정보

자료유형
학술저널
저자정보
Moojin Kim (Jungwon University) Kyoung-Bo Kim (Inha Technical College)
저널정보
한국진공학회(ASCT) Applied Science and Convergence Technology Applied Science and Convergence Technology Vol.26 No.6
발행연도
2017.11
수록면
208 - 213 (6page)

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초록· 키워드

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Flexible opto-electronic devices are developed on the insulating layer deposited stainless steel (STS) substrates. The silicon dioxide (SiO₂) material as the diffusion barrier of Fe and Cr atoms in addition to the electrical insulation between the electronic device and STS is processed using the plasma enhanced chemical vapor deposition method. Noble silver (Ag) films of approximately 100 ㎚ thickness have been formed on SiO₂ deposited STS substrates by E-beam evaporation technique. The films then were annealed at 650℃ for 20 min using the rapid thermal annealing (RTA) technique. It was investigated the variation of the surface morphology due to the interaction between Ag films and SiO₂ layers after the RTA treatment. The results showed the movement of Si atoms in silver film from SiO₂. In addition, the structural investigation of Ag annealed at 650℃ indicated that the Ag film has the material property of p-type semiconductor and the bandgap of approximately 1 eV. Also, the films annealed at 650℃ showed reflection with sinusoidal oscillations due to optical interference of multiple reflections originated from films and substrate surfaces. Such changes can be attributed to both formation of SiO₂ on Ag film surface and agglomeration of silver film between particles due to annealing.

목차

Abstract
Ⅰ. Introduction
Ⅱ. Experimental Details
Ⅲ. Results and Discussion
Ⅳ. Conclusions
References

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