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The evolution of a direct observation technique for small-sizeddefects in a thin film is important in understanding of a water-vaporbarrier layers. An investigation into the availability of directobservation techniques for detecting nano-scaled defects in achromium thin film on a polymer substrate was performed. The bestimages of nano-scaled defects in Cr thin films were obtained usingconductive atomic force microscopy (C-AFM) in conjunction with adamascene process. When a dielectric Al2O3 layer was filled into thedefects, such as voids or grain boundaries, in the Cr coating via thisdamascene process, a distinctive conductivity image was obtainedfrom C-AFM. The major role of the dielectric material of the Al2O3layer, when filled into the nano-scaled defects in the Cr coating, wasthe generation of different values in conductivity during the C-AFManalysis. The results confirmed that the combination of C-AFM andthe filling of the dielectric Al2O3 layer into the defects via thedamascene process is a useful method for the direct observation ofnano-scaled defects comprised of deep and narrow trenches inmetallic thin films on a polymer substrate.

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