Enhancement of Thermoelectric Properties in Cold Pressed Nickel Doped Bismuth Sulfide Compounds

Fitriani Fitriani; Suhana Mohd Said; Shaifulazuar Rozali; Mohd Faiz Mohd Salleh; Mohd Faizul Mohd Sabri; Duc Long Bui; Tadachika Nakayama; Ovik Raihan; Megat Muhammad Ikhsan Megat Hasnan; Mohamed Bashir Ali Bashir; Farhan Kamal

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저자정보: Fitriani Fitriani (University of Malaya) Suhana Mohd Said (University of Malaya) Shaifulazuar Rozali (University of Malaya Malaysia) Mohd Faiz Mohd Salleh (University of Malaya) Mohd Faizul Mohd Sabri (University of Malaya Malaysia) Duc Long Bui (Hanoi University of Science and Technology) Tadachika Nakayama (Nagaoka University of Technology) Ovik Raihan (University of Malaya) Megat Muhammad Ikhsan Megat Hasnan (University of Malaya) Mohamed Bashir Ali Bashir (Eldaein University) Farhan Kamal (University of Malaya)

저널정보: 대한금속·재료학회 Electronic Materials Letters Electronic Materials Letters Vol.14 No.6

발행연도: 2018.1

수록면: 689 - 699 (11page)

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Nanostructured Ni doped Bi 2 S 3 (Bi 2−x Ni x S 3 , 0 ≤ x ≤ 0.07) is explored as a candidate for telluride free thermoelectric material,through a combination process of mechanical alloying with subsequent consolidation by cold pressing followed with asintering process. The cold pressing method was found to impact the thermoelectric properties in two ways: (1) introductionof the dopant atom in the interstitial sites of the crystal lattice which results in an increase in carrier concentration, and (2)introduction of a porous structure which reduces the thermal conductivity. The electrical resistivity of Bi 2 S 3 was decreasedby adding Ni atoms, which shows a minimum value of 2.35 × 10 −3 Ω m at 300 °C for Bi 1.99 Ni 0.01 S 3 sample. The presenceof porous structures gives a signifi cant eff ect on reduction of thermal conductivity, by a reduction of ~ 59.6% compared toa high density Bi 2 S 3 . The thermal conductivity of Bi 2−x Ni x S 3 ranges from 0.31 to 0.52 W/m K in the temperature range of27 °C (RT) to 300 °C with the lowest κ values of Bi 2 S 3 compared to the previous works. A maximum ZT value of 0.13 at300 °C was achieved for Bi 1.99 Ni 0.01 S 3 sample, which is about 2.6 times higher than (0.05) of Bi 2 S 3 sample. This work showan optimization pathway to improve thermoelectric performance of Bi 2 S 3 through Ni doping and introduction of porosity.

참고문헌 (22)

참고문헌 신청

Bell, L.E. / 2008 / Cooling, heating, generating power, and recovering waste heat with thermoelectric systems / Science 321(5895):1457~1461

Snyder, G.J / 2008 / Complex thermoelectric materials / Nat. Mater 7(2):105~114

Visnow, E / 2015 / On the true indium content of In-fi lled skutterudites / Inorg. Chem 54(16):7818~7827

Yang, J / 2009 / Automotive applications of thermoelectric materials / J. Electron. Mater 38(7):1245~1251

Amatya, R. / 2012 / Trend for thermoelectric materials and their earth abundance / J. Electron. Mater 41(6):1011~1019

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