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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 발행연도
- 2018.1
- 수록면
- 574 - 580 (7page)
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초록· 키워드
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Dislocation, one of typical crystallographic defects in silicon, is detrimental to the minority carrier lifetime of silicon wafer. Hydrogen passivation is able to reduce the recombination activity of dislocation, however, the passivation efficacy is stronglydependent on the experimental conditions. In this paper, a model based on the theory of hydrogen charge state control isproposed to explain the passivation efficacy of dislocation correlated to the peak temperature of thermal annealing and illuminationintensity. Experimental results support the prediction of the model that a mix of positively charged hydrogen andnegatively charged hydrogen at certain ratio can maximise the passivation efficacy of dislocation, leading to a better powerconversion efficiency of silicon solar cell with dislocation in it.
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참고문헌 (21)
참고문헌 신청
Imaizumi, M / 1997 / Effect of grain size and dislocation density on the performance of thin film polycrystalline silicon solar cells / J. Appl. Phys. 81:7635~7640
Guo, J.-H / 2006 / Investigations of parasitic shunt resistance in n-type buried contact solar cells / Prog. Photovolt. Res. Appl. 14:95~105
Benamara, M / 1996 / Structural and electrical investigations of silicon wafer bonding interfaces / Mater. Sci. Eng. B 42:164~167
Kveder, V / 2001 / Recombination activity of contaminated dislocations in silicon: a model describing electron-beam-induced current contrast behavior / Phys. Rev. B 63:115208
Sopori, B / 2002 / Silicon solar-cell processing for minimizing the influence of impurities and defects / J. Electron. Mater. 31:972~980
Guo, J.-H / 2006 / Investigations of parasitic shunt resistance in n-type buried contact solar cells / Prog. Photovolt. Res. Appl. 14:95~105
Benamara, M / 1996 / Structural and electrical investigations of silicon wafer bonding interfaces / Mater. Sci. Eng. B 42:164~167
Kveder, V / 2001 / Recombination activity of contaminated dislocations in silicon: a model describing electron-beam-induced current contrast behavior / Phys. Rev. B 63:115208
Sopori, B / 2002 / Silicon solar-cell processing for minimizing the influence of impurities and defects / J. Electron. Mater. 31:972~980
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