Development of Wide Band Gap P-a-SiOxCy:H Using Additional Trimethylboron as Carbon Source Gas

강동원; Porponth Sichanugrist; Bancha Janthong; Muhammad Ajmal Khan; Chisato Niikura; Makoto Konagai

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자료유형: 학술저널

저자정보: 강동원 (청주대학교) Porponth Sichanugrist (JST) Bancha Janthong (JST) Muhammad Ajmal Khan (JST) Chisato Niikura (National Institute for Materials Science) Makoto Konagai (JST)

저널정보: 대한금속·재료학회 Electronic Materials Letters Electronic Materials Letters Vol.12 No.4

발행연도: 2016.1

수록면: 462 - 467 (6page)

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We report p-type a-SiOxCy:H thin films which were fabricated byintroducing additional Trimethylboron (TMB, B(CH3)3) dopinggas into conventional standard p-type a-SiOx:H films. The TMBaddition into the condition of p-a-SiOx:H improved opticalbandgap from 2.14 to 2.20 eV without deterioration of electricalconductivity, which is promising for p-type window layer of thinfilm solar cells. The suggested p-a-SiOxCy:H films were appliedin amorphous silicon solar cells and we found an increase ofquantum efficiency at short wavelength regions due to widebandgap of the new p-layer, and thus efficiency improvementfrom 10.4 to 10.7% was demonstrated in a-Si:H solar cell byemploying the p-a-SiOxCy:H film. In case of a-SiOx:H cell, highopen circuit voltage of 1.01 V was confirmed by using thesuggested the p-a-SiOxCy:H film as a window layer. This new playercan be highly promising as a wide bandgap window layer toimprove the performance of thin film silicon solar cells.

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참고문헌 신청

Y. H. Heo / 2014 / Sol. Energ. Mat. Sol. C 122:107

J. -W. Schüttauf / 2015 / Sol. Energ. Mat. Sol. C 133:163

G. W. Shu / 2013 / Opt. Express 21:A123

D. Y. Kim / 2015 / Sol. Energ. Mat. Sol. C 141:148

S. Kim / 2013 / Sol. Energ. Mat. Sol. C 119:26

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강동원

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주요연구분야 공학 > 재료·에너지공학 > 기타 재료·에너지공학 공학 > 재료·에너지공학 > 재료공학

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Porponth Sichanugrist

소속기관 JST