A Bio-memristor with Overwhelming Capacitance Effect

Shuangsuo Mao; Xuejiao Zhang; Bai Sun; Bing Li; Tian Yu; Yuanzheng Chen; Yong Zhao

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자료유형: 학술저널

저자정보: Shuangsuo Mao (Southwest Jiaotong University) Xuejiao Zhang (Hebei North University) Bai Sun (Southwest Jiaotong University) Bing Li (Southwest Jiaotong University) Tian Yu (Sichuan University) Yuanzheng Chen (Southwest Jiaotong University) Yong Zhao (Southwest Jiaotong University)

저널정보: 대한금속·재료학회 Electronic Materials Letters Electronic Materials Letters Vol.15 No.5

발행연도: 2019.1

수록면: 547 - 554 (8page)

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A bio-memristor, which was prepared using the bio-materials as basic components, has being become the focus of researchowing to the potential application as medical diagnosis in biomedical field. Herein, an environmentally-friendly and sustainablebio-memristor device with Ag/walnut skin (WS)/ITO structure was fabricated, in which an obvious and reliablyrepeated rectangular current–voltage characteristic curve is observed. Our result shows that the WS, an useless bio-material,can be used to fabricate electronic devices after proper processing. Finally, the memory mechanism based on the conductivefilament mode associated the capacitance effect is ascribed. This work has opened a new way to exploit the next generationbio-electronic device with advantages of environmentally-friendly, sustainable and pollution-free.

#Bio-memristor · Capacitance effect · Rectangular hysteresis loop · Bio-materials · Environmentally-friendly

참고문헌 (35)

참고문헌 신청

Kolar, J. / 2014 / Down-scaling of resistive switching to nanoscale using porous anodic alumina membranes / J. Mater. Chem. C 2:349

Zhang, L. / 2014 / Coexistence of bipolar and unipolar resistive switching behaviors in the double-layer Ag/ZnS–Ag/CuAlO2 /Pt memory device / Appl. Surf. Sci 360:338

Zhou, G. D. / 2016 / Two-bit memory and quantized storage phenomenon in conventional MOS structures with double-stacked Pt-NCs in an HfAlO matrix / Phys. Chem. Chem. Phys 18:6509

Mondal, S. / 2014 / Current conduction and resistive switching characteristics of Sm2O3 and Lu2O3 thin films for low-power fl exible memory applications / J. Appl. Phys 115:014501

Hahm, S. G. / 2012 / Programmable bipolar and unipolar nonvolatile memory devices based on poly(2-( N -carbazolyl)ethyl methacrylate) end-capped with fullerene / Adv. Mater 24:1062

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