지원사업
학술연구/단체지원/교육 등 연구자 활동을 지속하도록 DBpia가 지원하고 있어요.
커뮤니티
연구자들이 자신의 연구와 전문성을 널리 알리고, 새로운 협력의 기회를 만들 수 있는 네트워킹 공간이에요.
논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 대한전자공학회 JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE Journal of Semiconductor Technology and Science Vol.21 No.5
- 발행연도
- 2021.10
- 수록면
- 304 - 310 (7page)
- DOI
- 10.5573/JSTS.2021.21.5.304
이용수
초록· 키워드
오류제보하기
In this study, an inductorless broadband transimpedance amplifier (TIA) is implemented using TSMC 90-nm complementary metal-oxide-semiconductor (CMOS) technology. A regulated cascode circuit with low input impedance is used as the input stage of the TIA. The core amplifier is a fully differential amplifier with active feedback. The output stage of the TIA is an equalizer based on a differential amplifier with a source degenerated resistor and capacitor. The TIA has a bandwidth of 24.8 GHz and good linearity. In the TIA chip testing, clear 25-Gb/s nonreturn to zero and 50-Gb/s four-level pulse amplitude modulation eye diagrams can be observed.
목차
Abstract
I. INTRODUCTION
II. CIRCUIT ARCHITECTURE AND ANALYSIS
III. MEASURED VERIFICATION
IV. CONCLUSION
REFERENCES
참고문헌 (13)
참고문헌 신청
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S. Bhoja, “PAM4 signaling for intra–data center and data center to data center connectivity (DCI),” in Opt. Fiber Commun. Conf., Los Angele, USA, W4D.5, March 2017.
H. Isono, “Latest standardization trends for client and networking optical transceivers and its future directions,” in Proc. SPIE 10560, Metro Data Center Opt. Netw. Short-Reach Link, San Francisco, USA, January 2018.
C. Knochenhauer, B. Sedighi, and F. Ellinger, “40 Gbit/s transimpedance amplifier with high linearity range in 0.13 μm SiGe BiCMOS,” Electron. Lett., Vol. 47, No. 10, pp. 605-606, 2011.
C.F. Campbell, M.S. Heins, M.Y. Kao, M.E. Muir, and J. M. Carroll, “A 0.15-μm GaAs MHEMT transimpedance amplifier IC for 40-Gb/s applications,” in IEEE MTT-S Int. Microwave Symp. Digest, Seattle, USA, pp. 79-82, June 2002.
S. Bhoja, “PAM4 signaling for intra–data center and data center to data center connectivity (DCI),” in Opt. Fiber Commun. Conf., Los Angele, USA, W4D.5, March 2017.
H. Isono, “Latest standardization trends for client and networking optical transceivers and its future directions,” in Proc. SPIE 10560, Metro Data Center Opt. Netw. Short-Reach Link, San Francisco, USA, January 2018.
C. Knochenhauer, B. Sedighi, and F. Ellinger, “40 Gbit/s transimpedance amplifier with high linearity range in 0.13 μm SiGe BiCMOS,” Electron. Lett., Vol. 47, No. 10, pp. 605-606, 2011.
C.F. Campbell, M.S. Heins, M.Y. Kao, M.E. Muir, and J. M. Carroll, “A 0.15-μm GaAs MHEMT transimpedance amplifier IC for 40-Gb/s applications,” in IEEE MTT-S Int. Microwave Symp. Digest, Seattle, USA, pp. 79-82, June 2002.
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