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- 자료유형
- 학술대회자료
- 저자정보
- 발행연도
- 2021.2
- 수록면
- 104 - 104 (1page)
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As the semiconductor devices shrinks in nanoscale, SiO<sub>2</sub> used as gate oxide gets challenging due to tunneling effect causing leakage current. [1] So high-k materials having high dielectric constant (k) are being studied to replace SiO<sub>2</sub>. Al<sub>2</sub>O<sub>3</sub> is considered as one of important high-k materi ... 전체 초록 보기
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