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논문 기본 정보

자료유형
학술저널
저자정보
Seo, Hun (LG Electronics Institute of Technology) Lee, Seung-Yoon (LG Electronics Institute of Technology) Lee, Kwang- Lyul (LG Electronics Institute of Technology) Kim, Jin-Hong (LG Electronics Institute of Technology) Bae, Byeong-Soo (Department of Materials Science and Eng., KAIST)
저널정보
정보저장시스템학회 정보저장시스템학회논문집 정보저장시스템학회논문집 제1권 제1호
발행연도
2005.1
수록면
34 - 41 (8page)

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We report some recent results in the rewritable Blu-ray Disc with enhanced overwrite cyclability by using the growth dominant eutectic based Ge(Sb70Te30)+Sb recording layer, GeN interface layer and write strategy optimization. We have developed phase-change optical media with appropriate write strategy for 36(i.e., 1X)-72Mbps(i.e., 2X) dual speed Blu-ray Disc system and fur the future high speed optical data storage. For recording layer, eutectic-based Ge(Sb70Te30)+Sb material was used and Sb/Te ratio and Ge content were optimized to obtain proper erasability and archival stability of recorded amorphous marks. The recording layer is wrapped up in GeN interface layers to obtain overwrite cyclability and higher crystallization speed. In addition, we designed appropriate write strategy so called Time-Shifted Multipulse (TSMP) write strategy where starting position of multipulse parts are shined from reference clock. With this write strategy, the jitter characteristics of the disc was improved and we found that leading edge jitter was improved much more than trailing edge jitter in 1X-2X speed recording. Finally, we investigated the higher speed feasibility of 144Mbps(i.e., 4X) by adopting some elemental doping to the eutectic based Ag-In-Sb-Te recording layer and structural optimization of constitution layers in Blu-ray Disc. In the paper, we report the effect of Sn addition for the feasibility of higher speed recording. The addition of Sn shows increases of the crystallization speed of phase change recording layer.

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