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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 대한전자공학회 JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE Journal of Semiconductor Technology and Science Vol.20 No.4
- 발행연도
- 2020.8
- 수록면
- 372 - 380 (9page)
- DOI
- 10.5573/JSTS.2020.20.4.372
이용수
초록· 키워드
오류제보하기
In this paper, a systematic and rigorous extraction procedure for InP heterojunction bipolar transistor (HBT) π-type small-signal model parameters is proposed. The AC current crowding effect modeled as a parallel RC circuit is included in the small-signal model of InP HBTs. All of the elements parameters are acquired by means of a systematic and rigorous extraction method based on peeling algorithm, and there is no any simplified approximation. The extraction equations are derived from S-parameters by peeling peripheral elements from small-signal models to get reduced ones, so the extraction technique is more easily understood and clearer. The complete π-type model for an emitter-up InP HBT with 1×15 μm² emitter area is established and validated, which shows that the small-signal equivalent circuit and elements values extraction method have very high accuracy.
목차
Abstract
I. INTRODUCTION
II. SMALL-SIGNAL MODEL
III. PARAMETER EXTRACTION PROCEDURE
IV. RESULTS AND DISCUSSIONS
V. CONCLUSION
REFERENCES
참고문헌 (22)
참고문헌 신청
J. C. Zhang, B. Liu, M. Liu, L. W. Zhang, J. C. Wang, and H. Jin, “A Watt-level Broadband Power Amplifier in GaAs HBT Process,” Journal of Semiconductor Technology and Science, vol. 19, no. 4, pp. 357-363, Aug. 2019.
M. Urteaga, Z. Griffith, R. Pierson, P. Rowell, A. Young, J. Hacker, B. Brar, S.K. Kim, R. Maurer and M.J.W Rodwell, “THz InP bipolar transistorscircuit integration and applications,” 2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), pp. 1-4, 22-25 Oct. 2017.
J. C. Zhang, M. Liu, L. W. Zhang, J. C. Wang, and B. Liu, “Design of a low-phase-noise Ka-band GaAs HBT VCO,” Journal of Circuits Systems and Computers, vol. 28, no. 10, pp. 1950174, Sep. 2019.
M. Liu, P. Xu, J. C. Zhang, B. Liu, and L. W. Zhang, “A 4.2-to-5.4 GHz stacked GaAs HBT power amplifier for C-band applications,” Circuit World, DOI: 10.1108/CW-05-2019-0046. Apr. 2020.
J. C. Zhang, M. Liu, J. C. Wang, L. W. Zhang, and B. Liu, “Modeling of InP HBTs with an improved Keysight HBT model,” Microw. J., vol. 62, no. 7, pp. 56-62, Jul. 2019.
M. Urteaga, Z. Griffith, R. Pierson, P. Rowell, A. Young, J. Hacker, B. Brar, S.K. Kim, R. Maurer and M.J.W Rodwell, “THz InP bipolar transistorscircuit integration and applications,” 2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), pp. 1-4, 22-25 Oct. 2017.
J. C. Zhang, M. Liu, L. W. Zhang, J. C. Wang, and B. Liu, “Design of a low-phase-noise Ka-band GaAs HBT VCO,” Journal of Circuits Systems and Computers, vol. 28, no. 10, pp. 1950174, Sep. 2019.
M. Liu, P. Xu, J. C. Zhang, B. Liu, and L. W. Zhang, “A 4.2-to-5.4 GHz stacked GaAs HBT power amplifier for C-band applications,” Circuit World, DOI: 10.1108/CW-05-2019-0046. Apr. 2020.
J. C. Zhang, M. Liu, J. C. Wang, L. W. Zhang, and B. Liu, “Modeling of InP HBTs with an improved Keysight HBT model,” Microw. J., vol. 62, no. 7, pp. 56-62, Jul. 2019.
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