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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한국진공학회(ASCT) Journal of Korean Vacuum Science & Technology Journal of Korean Vacuum Science & Technology Vol.2 No.1
- 발행연도
- 1998.4
- 수록면
- 25 - 31 (7page)
이용수
초록· 키워드
오류제보하기
The reliability of fluorine doped silicon oxide (SiOF) films for intermetal dielectrics in multilevel interconnections of ultra-large scale integrated circuits (ULSIs) is investigated. SiOF films were deposited by electron cyclotron resonance plasma-enhanced chemical vapor deposition (ECRPECVD) using H-free source gases, i.e., SiF₄ and O₂. The effect of post plasma treatment on the moisture absorption and dielectric properties of SiOF films was carried out in terms of air exposure time. The reliability test of Cu/TiN/SiOF/Si specimen was carried out in terms of temperature by rapid thermal annealing (RTA) in N₂ ambient. After O₂ plasma treatment, no appreciable peak directly related to moisture absorption was detected. The capacitance-voltage (C-V) characteristics of the O₂ plasma treated SiOF film showed that the film remained to hold the sound dielectric properties even after boiling treatment. The Cu/TiN/SiOF/Si system was found to be reliable up to 600℃.
목차
Abstract
Ⅰ. Introduction
Ⅱ. Experiment
Ⅲ. Results and Discussion
Ⅳ. Conclusion
Acknowledgments
References
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