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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한국전기전자재료학회 Transactions on Electrical and Electronic Materials Transactions on Electrical and Electronic Materials 제6권 제5호
- 발행연도
- 2005.1
- 수록면
- 198 - 201 (4page)
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초록· 키워드
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Photocurrent of a single-crystalline Si nanowire is investigated in this paper. Single-crystalline Si nanowires with amorphous SiO2 shells were first synthesized from ball-milled SiO powders by thermal chemical vapor deposition, and then the amorphous SiO2 shells were etched out from the as-synthesized Si nanowires. For a single-crystalline Si nanowire, photocurrent-voltage curves taken in air at room temperature were non-linear, and rapid photoresponses were observed when the light was switched on and off. The photocurrent was not changed in intensity under the illumination. Photocurrent mechanism in the single-crystalline Si nanowire is discussed in this paper.
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참고문헌 (16)
참고문헌 신청
/ 1967. / Photoconductivity of solids
/ 1987. / Transient photocurrent response in polycrystalline silicon thin films 62 : 3244 ~
/ 1993. / Electrically induced light emission and novel photocurrent response of a porous silicon device 63 : 770 ~
/ 2001. / Functional nanoscale electronic devices assembled using silicon nanowire building blocks functional na 291 (scale electronic devices assembled using silicon nawire
/ 2001. / Highly polarized photoluminescence and photodetection from single indium phosphide nanowires 293 : 1455 ~
/ 1987. / Transient photocurrent response in polycrystalline silicon thin films 62 : 3244 ~
/ 1993. / Electrically induced light emission and novel photocurrent response of a porous silicon device 63 : 770 ~
/ 2001. / Functional nanoscale electronic devices assembled using silicon nanowire building blocks functional na 291 (scale electronic devices assembled using silicon nawire
/ 2001. / Highly polarized photoluminescence and photodetection from single indium phosphide nanowires 293 : 1455 ~
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