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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 대한전자공학회 JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE Journal of Semiconductor Technology and Science Vol.18 No.1
- 발행연도
- 2018.2
- 수록면
- 36 - 41 (6page)
- DOI
- 10.5573/JSTS.2018.18.1.036
이용수
초록· 키워드
오류제보하기
A state-of-the-art broadband on-chip power divider in millimeter-wave up to 103 GHz is presented. The power divider employs novel three-dimensional (3-D) three-coupled lines to achieve the desired mode impedances for an extremely wideband characteristic. The power divider was implemented in TSMC 180 nm RF CMOS IC technology with six metal layers. Measurements show the absolute bandwidth from 11 to 103 GHz with matching conditions of all of the ports and isolation between two outputs of less than -10 dB. The fractional bandwidth is 161.4%. The insertion loss is between 1.2 and 7.9 dB across the overall bandwidth. The core size of the power divider is 0.18 mm × 0.68 mm.
목차
Abstract
I. INTRODUCTION
II. ANALYSIS AND DESIGN
III. IMPLEMENTATION AND MEASUREMENT RESULTS
IV. CONCLUSIONS
REFERENCES
참고문헌 (7)
참고문헌 신청
J. G. Kim et al., “Miniature four-way and two way 24 GHz Wilkinson power dividers in 0.13um CMOS,” IEEE Microw. Wireless Compon. Lett., vol. 17, no. 9, pp. 658?660, Sep. 2007.
Y. Sun et al., “Broadband folded Wilkinson power combiner/splitter,” IEEE Microwave Wireless Compon. Lett., vol. 14, no. 6, pp. 295-297, Jun. 2004.
Y. Lai et al., “A compact Ka-band planar three-way power divider,” IEEE Microw. Wireless Compon. Lett., vol. 17, no. 12, pp. 840 -842, Dec. 2007.
T.-S. Dang et al., “Ultra-wide band power divider using three parallel-coupled lines and one shunt stub,” IET Electronics Letters, vol. 50, no. 2, pp. 95?96, Jan. 2014.
T.-S. Dang et al., “Power divider with bandwidth from 14 to 82 GHz in CMOS IC technology,” IET Electronics Letters, vol. 50, no. 14, pp. 1007?1009, July 2014.
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