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In this paper, we report the research highlight on the preparation and characterization of Indium-free Cu₂ZnSnSe₄ and Indium-reduced CulnZnSe₂ thin films in order to seek the viability of these absorber materials to be applied in thin film solar cells. The films of Cu₂ZnSnSe₄;and;CulnZnSe₂ were prepared using mixed binary chalcogenides powders. It was observed that Cu concentration was a function of substrate temperature as well as CuSe mole ratio in the target. Under an optimized condition, Cu₂ZnSnSe₄;and;CulnZnSe₂ thin films grew with strong [112]. [220/204] and [312/116] reflections. Both Cu₂ZnSnSe₄;and;CulnZnSe₂ films were found to exhibit a high absorption coefficient of 104⁴cm^{-1};Cu₂ZnSnSe₄ film showed a band gap of 1.5eV which closes to the optimum band gap of an ideal solar absorber for a solar cell. On the other side, an increase of optical band gap from 1.0 to 1.25eV was found to be proportional with an increase of Zn concentration in the CulnZnSe₂ film. All films in this study revealed a p-type semiconductor characteristic.
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