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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 대한전자공학회 JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE Journal of Semiconductor Technology and Science Vol.14 No.6
- 발행연도
- 2014.12
- 수록면
- 728 - 732 (5page)
이용수
초록· 키워드
오류제보하기
Macro-model of magnetic tunnel junction (MTJ) for spin transfer torque magnetic random access memory (STT-MRAM) has been developed. The macro-model can describe the dynamic behavior such as the state change of MTJ as a function of the pulse width of driving current and voltage. The statistical behavior has been included in the model to represent the variation of the MTJ characteristic due to process variation. The macro-model has been developed in Verilog-A.
목차
Abstract
Ⅰ. INTRODUCTION
Ⅱ. SWITCHING TIME OF MTJ
Ⅲ. DYNAMIC BEHAVIOR MODELING OF MTJ
Ⅳ. RESULTS
Ⅴ. CONCLUSIONS
REFERENCES
참고문헌 (11)
참고문헌 신청
Noboru Sakimura / 2012 / High-Speed Simulator including Accurate MTJ Models for Spintronics Integrated Circuit Design / Circuits and Systems, 2012 IEEE International Symposium on, 2012 ISCAS :1971~1974
Ki Chul Chun / 2013 / A Scaling Roadmap and Performance Evaluation of In-Plane and Perpendicular MTJ Based STT-MRAMs for High-Density Cache Memory / Solid-State-Circuits, IEEE Journal of 48(2):598~610
Z. Diao / 2007 / Spin-transfer torque switching in magnetic tunnel junctions and spin-transfer torque random access memory / Journal of Physics : Condens. Matter 19(16):165209
K. Ono / 2009 / a disturbance-free read scheme and a compact stochastic-spin-dynamics-based MTJ circuit model for Gb-scale SPRAM / IEEE International Electron Devices Meeting :219~222
Y. Asao / 2008 / A Statistical Model for Assessing the Fault Tolerance of Variable Switching Currents for a 1Gb Spin Transfer Torque Magnetoresistive Random Access Memory / IEEE International Symposium on Defect and fault Tolerance of VLSI Systems :507~515
Ki Chul Chun / 2013 / A Scaling Roadmap and Performance Evaluation of In-Plane and Perpendicular MTJ Based STT-MRAMs for High-Density Cache Memory / Solid-State-Circuits, IEEE Journal of 48(2):598~610
Z. Diao / 2007 / Spin-transfer torque switching in magnetic tunnel junctions and spin-transfer torque random access memory / Journal of Physics : Condens. Matter 19(16):165209
K. Ono / 2009 / a disturbance-free read scheme and a compact stochastic-spin-dynamics-based MTJ circuit model for Gb-scale SPRAM / IEEE International Electron Devices Meeting :219~222
Y. Asao / 2008 / A Statistical Model for Assessing the Fault Tolerance of Variable Switching Currents for a 1Gb Spin Transfer Torque Magnetoresistive Random Access Memory / IEEE International Symposium on Defect and fault Tolerance of VLSI Systems :507~515
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