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논문 기본 정보

자료유형
학술저널
저자정보
Gwang Jun Yu (Sungkyunkwan University) Young Sun Kim (Joongbu University) Dong Yoon Lee (Joongbu University) Jae Jun Park (Joongbu University) Se Hee Lee (Kyungpook National University) Il Han Park (성균관대학교)
저널정보
대한전기학회 Journal of Electrical Engineering & Technology Journal of Electrical Engineering & Technology Vol.9 No.1
발행연도
2014.1
수록면
307 - 312 (6page)

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초록· 키워드

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We present a full finite element analysis for plasma discharge in etching process of semiconductor circuit. The charge transport equations of hydrodynamic diffusion-drift model and the electric field equation were numerically solved in a fully coupled system by using a standard finite element procedure for transient analysis. The proposed method was applied to a real plasma reactor in order to characterize the plasma sheath that is closely related to the yield of the etching process. Throughout the plasma discharge analysis, the base electrode of reactor was tested and modified for improving the uniformity around the wafer edge. The experiment and numerical results were examined along with SEM data of etching quality. The feasibility and usefulness of the proposed method was shown by both numerical and experimental results.

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Abstract
1. Introduction
2. Analysis Model of Dry Etching Chamber
3. Hydrodynamic Diffusion-Drift Model for Discharge Process
4. Numerical and Experimental Results
5. Conclusion
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UCI(KEPA) : I410-ECN-0101-2015-500-001072580