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자료유형
학술저널
저자정보
주정훈 (군산대학교)
저널정보
한국표면공학회 한국표면공학회지 한국표면공학회지 제45권 제5호
발행연도
2012.10
수록면
206 - 211 (6page)

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Process analysis was carried out during deposition of MgO by inductively coupled plasma assisted reactive magnetron sputtering in Ar and O₂ ambient. At the initiation of Mg sputtering with bipolar pulsed dc power in Ar ambient, total pressure showed sharp increase and then slow fall. To analyse partial pressure change, QMS was used in downstream region, where the total pressure was maintained as low as 10<SUP>?5</SUP> Torr during plasma processing, good for ion source and quadrupole operation. At base pressure, the major impurity was H₂O and the second major impurity was CO/N₂ about 10%. During sputtering of Mg in Ar, H₂ soared up to 10.7% of Ar and remained as the major impurity during all the later process time. When O₂ was mixed with Ar, the partial pressure of Ar decreased in proportion to O₂ flow rate and that of H₂ dropped down to 2%. It was understood as Mg target surface was oxidized to stop H2 emission by Ar ion sputtering. With ICP turned on, the major impurity H2 was converted into H₂O consuming O₂and C was also oxidized to evolve CO and CO₂.

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Abstract
1. 서론
2. 실험 방법
3. 실험 결과 및 고찰
4. 결론
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UCI(KEPA) : I410-ECN-0101-2014-581-001028123