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학술연구/단체지원/교육 등 연구자 활동을 지속하도록 DBpia가 지원하고 있어요.
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논문 기본 정보
- 자료유형
- 학술대회자료
- 저자정보
- 저널정보
- 대한전자공학회 ICEIC : International Conference on Electronics, Informations and Communications ICEIC : 2008
- 발행연도
- 2008.6
- 수록면
- 201 - 204 (4page)
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초록· 키워드
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In this paper, we proposed a CMOS level shifter with high speed and low power operation using low temperature poly-crystalline silicon (LTPS) thin film transistors (TFTs). The previously reported cross-coupled level shifter using LTPS TFTs suffers from slow transition time and high power consumption. To resolve these problems, we proposed the level shifter using bootstrapping method for fast output response. Using the proposed level shifter, the transition time is decreased and power consumption is decreased compared to cross-coupled level shifter. In the simulated results, the power consumption of proposed CMOS level shifter is 2.91% of cross-coupled latch level shifter, only 190㎼ at 13㎒ operation. And it can operate at high frequency up to 15㎒ with 280㎼ power consumption.
목차
Abstract
1. Introduction
2. Previously reported level shifter
3. Operation of the proposed level shifter
4. Simulation result of the proposed level shifter
5. Conclusions
References
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