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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- Korean Institute of Information Scientists and Engineers Journal of Electrical Engineering and Information Science Journal of Electrical Engineering and Information Science Vol.3 No.5
- 발행연도
- 1998.10
- 수록면
- 672 - 676 (5page)
이용수
초록· 키워드
오류제보하기
In this paper, a theory correlating the excitonic photoluminescence linewidth in quantum wells with the microscopic structure of the interface in the presence of a magnetic field is presented. The interface is described in terms of microscopic fluctuations δ_1 land δ_2 where δ_1 is the local fluctuation in the well width and δ_2 is the lateral correlated extent of the fluctuation. The Lifshitzs theory of disorderd alloys to determine the probability distribution of fluctuations of the well size over the effective extent of the optical probe, namely, the exciton has been used. The photoluminescence line shape is then calculated from this distribution. The fullwidth at half maximum (FWHM) for both the heavy-hole exciton and the light-hole exciton as a function of the well size and interface parameters δ_1 and δ_2 in the presence of of a magnetic field in GaAs-Al_0.3Ga_0.7As and In_0.53Ga_0.47As-InP quantum well structures has been evaluated. For a given set of values of well width and interface parameters, the application of the magnetic field reduces the effective size of the exciton and thus increases the linewidth.
목차
Abstract
Ⅰ. Introduction
Ⅱ. Theory
Ⅲ. Results and Discussion
Ⅳ. Summary
References
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