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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- Korean Institute of Information Scientists and Engineers Journal of Electrical Engineering and Information Science Journal of Electrical Engineering and Information Science Vol.3 No.3
- 발행연도
- 1998.6
- 수록면
- 385 - 390 (6page)
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초록· 키워드
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In this paper, the oscillator strengths of both the heavy-hole and the light-hole excitons in GaAs-A_(l0.3)Ga_(0.7),As and In_(0.53)Ga_(0.47)As-InP quantum wells with the effect of a magnetic field applied along the growth axis are studied. The calculation is carried out using a variational approach, based on a simple trial exciton wave function. The exciton oscillator strengths are found to decrease with increasing well width and to increase with the applied magnetic fields which lead to additional quantum confinement for moderately wide well sizes. Also, the oscillator strengths for the heavy-hole exciton are found to be larger than those of the light-hole exciton in these quantum well structures.
목차
Abstract
Ⅰ. Introduction
Ⅱ. Theory
Ⅲ. Results and Discussion
Ⅳ. Summary
Acknowledgment
References
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