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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 발행연도
- 2004.11
- 수록면
- 2,042 - 2,048 (7page)
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초록· 키워드
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A molecular dynamics study has been conducted on an external-force-field-induced iso-thermal crystallization process of amorphous structures as a new low-temperature athermal crystallization process. An external cyclic-force field with a de bias is imposed on molecules selected randomly in an amorphous-phase of argon. Multiple peaks smoothed out in the radial distribution functions for amorphous states appear very clearly during the crystallization process that cannot be achieved otherwise. When the amorphous material is locally exposed to an external force field, crystallization starts and propagates from the interfacial region and crystallization growth rates can be estimated.
목차
Abstract
1. Introduction
2. Simulation Model
3. Results and Discussion
4. Conclusions
Acknowledgment
References
참고문헌 (22)
참고문헌 신청
[학술지(정기간행물)] - / 2002 / Microwave-Induced Low-Temperature Crystallization of Amorphous Si Thin Films 2 : 135 ~ 139
[학술지(정기간행물)] - / 1987 / Computer Simulation of Liquids
[학술지(정기간행물)] - / 1995 / Recrystallization of a Planar Amorphous-Crystalline Interface in Silicon by Low Energy Recoils 77 : 3121 ~ 3125
[학술지(정기간행물)] - / 2002 / Molecular Dynamics Simulation of Adhesion Processes 16 : 1440 ~ 1447
[학술지(정기간행물)] - / 1998 / Electric-Field-Enhanced Crystallization of Amorphous Silicon 395 : 481 ~ 483
[학술지(정기간행물)] - / 1987 / Computer Simulation of Liquids
[학술지(정기간행물)] - / 1995 / Recrystallization of a Planar Amorphous-Crystalline Interface in Silicon by Low Energy Recoils 77 : 3121 ~ 3125
[학술지(정기간행물)] - / 2002 / Molecular Dynamics Simulation of Adhesion Processes 16 : 1440 ~ 1447
[학술지(정기간행물)] - / 1998 / Electric-Field-Enhanced Crystallization of Amorphous Silicon 395 : 481 ~ 483
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UCI(KEPA) : I410-ECN-0101-2009-550-014428862