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학술연구/단체지원/교육 등 연구자 활동을 지속하도록 DBpia가 지원하고 있어요.
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IGCTs have established themselves as the power semiconductor of choice at medium voltage levels within the last few years because of their low conduction and switching losses The trade-off between these losses can be adjusted by various lifetime control techniques and the growing demand for these devices is driving the need for standard types to cover such applications as Static Circuit Breakers (low on-state) and Medium Voltage Drives (low switching losses). The additional demands of Traction (low operating temperatures) and Current Source Inverters (symmetric blocking) would normally result in conflicting demands on the semiconductor This paper will outline how a range of power devices can meet these needs with a limited number of wafers and gate units Some of the key differences between IGCTs and IGBTs will be explained and the outlook for device improvements will be discussed.
목차
Abstract
Ⅰ.PRINCIPAL OF OPERATION
Ⅱ.ON, OFF AND CONDUCTION LOSSES
Ⅲ.APPLICATIONS
Ⅳ.IGCT PROCUCT RANGE
Ⅴ.OUTLOOK
Ⅵ.CONCLUSIONS
REFERENCES
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UCI(KEPA) : I410-ECN-0101-2009-560-014236751