메뉴 건너뛰기
.. 내서재 .. 알림
소속 기관/학교 인증
인증하면 논문, 학술자료 등을  무료로 열람할 수 있어요.
한국대학교, 누리자동차, 시립도서관 등 나의 기관을 확인해보세요
(국내 대학 90% 이상 구독 중)
로그인 회원가입 고객센터 ENG
주제분류

추천
검색
질문

논문 기본 정보

자료유형
학술대회자료
저자정보
Qiang Yi (Xi’an Jiaotong University) Yifei Wu (Xi’an Jiaotong University) Yi Wu (Xi’an Jiaotong University) Fei Yang (Xi’an Jiaotong University) Zhihui Zhang (Xi’an Jiaotong University) Chong Gao (Xi’an Jiaotong University)
저널정보
전력전자학회 ICPE(ISPE)논문집 ICPE 2019-ECCE Asia
발행연도
2019.5
수록면
1,682 - 1,687 (6page)

이용수

표지
📌
연구주제
📖
연구배경
🔬
연구방법
🏆
연구결과
AI에게 요청하기
추천
검색
질문

초록· 키워드

오류제보하기
Power semiconductors for DC circuit breaker (DCCB) have attracted great attentions due to their fast and arc-less operation under full-range current-breaking. Since the robustness of Integrated Gate-Commutated Thyristor (IGCT) is the highest among all full-control power semiconductors, it becomes the perfect power semiconductor candidate for DC circuit breaker. In this paper, the principle and operation of hybrid circuit breaker are introduced. Technical analysis of full-control power semiconductor is conducted and IGCT is the best choice for HCB. Then, A novel power semiconductor circuit based on two IGCTs, diode-bridge, snubber-circuit and MOV is proposed and designed both topologically and structurally. The selection of full-control power semiconductor is discussed and fast recover diode must be used to ensure reliability. Furthermore, the internal current distribution is analyzed. Finally, a test of a single-stage IGCT module prototype demonstrates successful current-breaking at over 10kA and below 4kV, which is promising in the area of fault protection in future MVDC distribution system.

목차

Abstract
I. INTRODUCTION
II. ANALYSIS OF POWER SEMICONDUCTOR MODULES IN CIRCUIT-BREAKER
III. DESIGN OF IGCT MODULE FOR HCB
IV. EXPERIMENT OF IGCT MODULE
V. CONCLUSIONS
REFERENCES

참고문헌 (0)

참고문헌 신청

함께 읽어보면 좋을 논문

논문 유사도에 따라 DBpia 가 추천하는 논문입니다. 함께 보면 좋을 연관 논문을 확인해보세요!

이 논문의 저자 정보

최근 본 자료

전체보기

댓글(0)

0