지원사업
학술연구/단체지원/교육 등 연구자 활동을 지속하도록 DBpia가 지원하고 있어요.
커뮤니티
연구자들이 자신의 연구와 전문성을 널리 알리고, 새로운 협력의 기회를 만들 수 있는 네트워킹 공간이에요.
논문 기본 정보
- 자료유형
- 학술대회자료
- 저자정보
- 발행연도
- 2019.5
- 수록면
- 793 - 798 (6page)
이용수
초록· 키워드
오류제보하기
The high-power semiconductor IGCT is widely used in two-level or three-level IGCT converters and for these converters a comprehensive system-protection strategy may be used to protect the IGCT. But there are still some problems resulted from signal transmission delays, such as incorrect timing, low response speeds, second breakdown and those problems can result in IGCT overload failure, bridge-arm shoot-through and other consequences.
In this paper, the anode voltage and current parameters gained from the IGCT device are studied as protection reference in a new GCT gate drive unit. The gate drive unit can control and process the signal logic, and execute safe and reliable switching action. The signal is simultaneously feed back to the host computer in IGCT converters to perform the switching control of other devices. This new gate unit can effectively reduce device failure rates and improve the reliability of IGCT converters systems, while reducing operating costs.
In this paper, the anode voltage and current parameters gained from the IGCT device are studied as protection reference in a new GCT gate drive unit. The gate drive unit can control and process the signal logic, and execute safe and reliable switching action. The signal is simultaneously feed back to the host computer in IGCT converters to perform the switching control of other devices. This new gate unit can effectively reduce device failure rates and improve the reliability of IGCT converters systems, while reducing operating costs.
목차
Abstract
I. INTRODUCTION
II. ANODE CURRENT DETECTING
III. ANODE VOLTAGE DETECTING
IV. PROTECTION STRATAGE
V. PROTOTYPE TEST
VI. CONCLUTION
VII. REFERENCES
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