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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 대한전자공학회 JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE JOUNAL OF SEMICONDUCTOR THCHNOLOGY AND SCIENCE Vol.4 No.2
- 발행연도
- 2004.6
- 수록면
- 94 - 99 (6page)
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초록· 키워드
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Silicided 50-nm-gate-length n-type Schottky barrier metal-oxide-semiconductor field-effect-transistors (SB-MOSFETs) with 5 nm gate oxide thickness are manufactured. The saturation current is 120 uA/uM and on/off-current ratio is higher than 10^5 with low leakage current less than 10nA/um. Novel phenomena of this device are discussed. The increase of tunneling current with the increase of drain voltage is explained using drain induced Schottky barrier thickness thinning effect. The abnormal increase of drain current with the decrease of gate voltage is explained by hole carrier injection from drain into channel. The mechanism of threshold voltage increase in SB-MOSFETs is discussed. Based on the extracted model parameters, the performance of 10-nm-gate-length that the subthreshold swing valve can be lower than 60mV/decade.
목차
ABSTRACT
1.INTROCUTION
2.EXPERIMENTAL
3.RESULTS AND DISCUSSION
4.CONCLUSION
REFERENCES
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