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최근 소자의 고집적화, 소형화 기술에 대한 요구로 노광 공정의 광원 파장이 단파장화 됨에 따라 해당 영역에서의 소다라임 유리기판을 적용한 투과율 특성이 더욱 중요해지고 있다. 한편, 노광 공정 중 포토마스크와 접촉하는 기재 간의 마찰, 박리 등의 원인으로 차광막인 chromium 금속층이 대전 되고 정전기가 축적됨에 따라 취약 부분에서 ESD(Electro static damage) 발생으로 마스크의 손상 및 수율 감소 등의 문제가 발생할 수 있다. 이에 블랭크 마스크 혹은 포토마스크에 다양한 기능성 코팅을 통해 투과율 및 정전기 방지 성능 향상을 위한 연구가 이루어지고 있다.
본 연구에서는 DC magnetron sputtering 장비를 사용하여 3.0 mmt의 소다라임 유리기판 표면 반사를 최소화하기 위한 무반사 코팅 설계를 진행하였으며, 낮은 반사율을 얻기 위해서 기판표면의 저굴절률 물질과 고굴절률 물질을 교대로 증착하여 위상차를 줄이고 소다라임의 투과율을 높이는 반사방지막을 제조하였다. 이를 위해서 기계적 내구성 및 광학 특성이 우수한 SiO2. Nb2O5 박막과 전도성 역할을 갖는 ITO 박막을 이용한 다층 반사방지 박막의 공정 변수에 따른 광학적 특성과의 상관관계를 규명하였다. ITO (Indium Tin Oxide) 박막은 근자외선 영역에서 굴절률이 높으나 흡수가 존재하여 이를 위해 흡수 영향을 최소화하기 위한 박막 두께를 정밀하게 조절하여 고굴절 물질과 저굴절 물질을 교대로 증착하는 다층 반사방지막을 구현할 수 있다. 설계에 있어서 얇은 두께의 ITO 박막의 최적 증착 조건을 결정하면 최소 3층으로 대전 방지, 반사방지 박막을 동시에 만족하는 박막을 연구하고 정확한 화학 조성비와 광학적 성능을 평가하였다. 단면형 다층구조를 가지는 Air│소다라임 유리│ITO│SiO2│Nb2O5 에서 최적화 설계하여 포토마스크가 자외선 영역중 I-line(365 nm)에서 높은 투과율을 유지하면서도 대전 방지 특성을 가질 수 있도록 제작하여 특성을 비교하였다. antistatic (AS) 역할을 하는 ITO 박막의 두께는 ≤10 nm 이하에서 as-deposition 상태 면 저항 3.0 × 103 Ω/□를 나타내며, I-line의 투과율은 ITO의 흡수계수 영향으로 약 87% 수준으로 비교적 낮은 결과에 대하여 고찰하였다.
I-line(365 nm)에서의 투과율 증가를 위해 Air│소다라임 유리│ITO│Air 기판상에 반사방지막 Nb2O5│SiO2 양면 증착 진행한 결과 양면형 Air│SiO2│Nb2O5│소다라임 유리│ITO│SiO2│Nb2O│Air 최종 구조에서의 고투과율 특성에 미치는 영향에 대하여 고찰하였다. 이를 토대로 기판 소재의 연구를 수행한다면 광학 핵심부품 소재 산업에 응용 가능할 것으로 기대된다.
본 연구에서는 DC magnetron sputtering 장비를 사용하여 3.0 mmt의 소다라임 유리기판 표면 반사를 최소화하기 위한 무반사 코팅 설계를 진행하였으며, 낮은 반사율을 얻기 위해서 기판표면의 저굴절률 물질과 고굴절률 물질을 교대로 증착하여 위상차를 줄이고 소다라임의 투과율을 높이는 반사방지막을 제조하였다. 이를 위해서 기계적 내구성 및 광학 특성이 우수한 SiO2. Nb2O5 박막과 전도성 역할을 갖는 ITO 박막을 이용한 다층 반사방지 박막의 공정 변수에 따른 광학적 특성과의 상관관계를 규명하였다. ITO (Indium Tin Oxide) 박막은 근자외선 영역에서 굴절률이 높으나 흡수가 존재하여 이를 위해 흡수 영향을 최소화하기 위한 박막 두께를 정밀하게 조절하여 고굴절 물질과 저굴절 물질을 교대로 증착하는 다층 반사방지막을 구현할 수 있다. 설계에 있어서 얇은 두께의 ITO 박막의 최적 증착 조건을 결정하면 최소 3층으로 대전 방지, 반사방지 박막을 동시에 만족하는 박막을 연구하고 정확한 화학 조성비와 광학적 성능을 평가하였다. 단면형 다층구조를 가지는 Air│소다라임 유리│ITO│SiO2│Nb2O5 에서 최적화 설계하여 포토마스크가 자외선 영역중 I-line(365 nm)에서 높은 투과율을 유지하면서도 대전 방지 특성을 가질 수 있도록 제작하여 특성을 비교하였다. antistatic (AS) 역할을 하는 ITO 박막의 두께는 ≤10 nm 이하에서 as-deposition 상태 면 저항 3.0 × 103 Ω/□를 나타내며, I-line의 투과율은 ITO의 흡수계수 영향으로 약 87% 수준으로 비교적 낮은 결과에 대하여 고찰하였다.
I-line(365 nm)에서의 투과율 증가를 위해 Air│소다라임 유리│ITO│Air 기판상에 반사방지막 Nb2O5│SiO2 양면 증착 진행한 결과 양면형 Air│SiO2│Nb2O5│소다라임 유리│ITO│SiO2│Nb2O│Air 최종 구조에서의 고투과율 특성에 미치는 영향에 대하여 고찰하였다. 이를 토대로 기판 소재의 연구를 수행한다면 광학 핵심부품 소재 산업에 응용 가능할 것으로 기대된다.
목차
그림 목차 ···········································································································Ⅳ표 목차 ···············································································································Ⅵ국문요약 ·············································································································Ⅶ제 1장 서론 ·········································································································1제 2장 이론적 배경 ···························································································42-1. 반사방지막(Antireflection, AR) 원리 ·················································42-1-1. 반사방지막의 형성 조건 ································································62-2. 광학박막 물질 ······················································································102-2-1. 저굴절률 박막(SiO2)의 물성 ························································102-2-2. 고굴절률 박막(Nb2O5)의 물성 ·····················································122-3. 대전방지 박막(Antistatic, AS) 원리 ·················································142-3-1. ITO 박막의 전기적 및 광학적 특성 ·········································162-4. 반사방지│대전방지 증착 방법 ························································192-4-1. 전자빔 증착법 ················································································192-4-2. DC 마그네트론 스퍼터링법 ························································222-5. Essential Macleod Program ·······························································26제 3장 실험방법 ·······························································································283-1. 실험장치 ································································································283-2. 단일·다층박막(AR│AS) 구현 ·························································303-3. 단일·다층박막(AR│AS) 특성분석 ·················································33제 4장 본론 ·······································································································354-1. 고투과성 대전방지 박막의 광학설계 ··············································354-2. 저굴절률 박막(SiO2)의 제작 ······························································394-2-1. SiO2 박막의 이력곡선 ···································································394-2-2. 반은성 가스 조건에 따른 단일막 특성 ····································424-2-3. 공정압력 조건에 따른 단일막 특성 ··········································464-3. 고굴절률 박막(Nb2O5)의 제작 ···························································494-3-1. Nb2O5 박막의 이력곡선 ·······························································394-3-2. 반은성 가스 조건에 따른 단일막 특성 ··································524-3-3. 공정압력 조건에 따른 단일막 특성 ········································574-4. 대전방지 박막(ITO)의 제작 ·······························································604-4-1. 반은성 가스 조건에 따른 단일막 특성 ····································604-4-2. 공정압력 조건에 따른 단일막 특성 ··········································644-5. 다층박막(AR│AS)의 구현 ·································································664-5-1. 투과율 및 박막 두께 분석 ··························································664-5-2. 환경시험 및 내마찰 시험 ····························································69제 5장 결론 ·······································································································73참고문헌 ·············································································································75Abstract ··············································································································79
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