Nowadays, semiconductor memory devices are essential to our lives. As higher density of chip is required, however, scaling down of memory cell has reached its limit. For this reason, researchers are focusing on the next generation memory devices. In this thesis, the fabrication and characterization of a resistive random access memory, or simply ReRAM, cell with multi-layer insulator is described. Graphene oxide (GO) and polyvinyl alcohol (PVA) composite were used as an insulating material of the proposed device. If a proper voltage is applied to a ReRAM, oxygen ions move out from the insulator layer, forming conductive filament. This phenomenon is called SET, transition from high resistive state (HRS) to low resistive state (LRS). ReRAM also has another characteristic called RESET which indicates state transition from LRS to HRS. a ReRAM with PVA-GO composite insulator was proposed as a new polymer-based ReRAM and its fabrication and characteristics are described in this thesis. The proposed Re-RAM device with a simple PVA-Go insulator showed instability in the switching characteristics. Therefore, to improve its stability, two additional PVA layers were added between this GO-PVA composite insulator and metal layers.. Since the insulator was made of polymer insulator and a polymer composite material, the annealing temperature makes a significant impact to the insulator property. Therefore, the effect of annealing temperature was investigated by changing the annealing temperature to three different temperatures of 100℃, 150℃ and 200℃. Temperatures were selected considering the melting point and the glassy temperature of PVA. Three most important characteristics of a ReRAM are switching properties, endurance, and retention time. The SET and RESET voltage of the proposed ReRAM devices changed from 3.92 V/? 3.185 V to 3.5 V/-1.81 V as the annealing temperature varies from 100℃; to 200℃. , resulting in lower switching voltages. The higher annealing temperature also improved the memory endurance from 100 cycles to 200 cycles as the annealing temperature varies from 100℃ to 200℃. The retention time of the proposed ReRAM devices showed a longer time 2000 seconds with 100℃ annealing compared to 1800 seconds with200℃ annealing. The conduction mechanism was also investigated considering the well-accepted published filament formation model and added ac annealing temperature effect to a typical filament model. It is believed that the conduction in HRS is dominated by Poole-Frenkel emission and the conduction in LRS is ohmic. As a result, Glass/Ti/Au/PVA/GO-PVA/PVA/Au ReRAM device revealed reasonably good characteristics with proper annealing temperature but further development is required to be useful in the industry.