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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한국진공학회(ASCT) Applied Science and Convergence Technology Applied Science and Convergence Technology Vol.32 No.6
- 발행연도
- 2023.11
- 수록면
- 151 - 154 (4page)
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초록· 키워드
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We report the fabrication and characterization of a heterojunction diode with a MgZnO/ZnO structure grown on a GaN/Al₂O₃ substrate. A radio frequency sputtering method was employed to achieve a high Mg composition in the MgZnO alloy layer, whereas the ZnO layer was epitaxially grown by metal-organic chemical vapor deposition. The MgZnO/ZnO-based heterojunction diode exhibited rectifying current- voltage (I−V) characteristics under both forward and reverse bias. However, white electroluminescence (EL) emission was observed only under high forward bias. To understand these phenomena, we thoroughly investigated the I−V characteristics of the heterojunction diode, which revealed that the tunneling of holes through the MgZnO barrier is an important mechanism for EL emission. In particular, the Fowler-Nordheim (FN) tunneling of holes is mainly responsible for EL emission under high forward bias. An explanatory schematic of the band diagram based on the I−V characteristics suggests that the EL emission is primarily attributed to the injection of holes via FN tunneling through the MgZnO barrier. This study provides a potential application for optoelectronic devices using MgZnO/ZnO-based heterostructures as ZnO-based light emitters.
목차
ABSTRACT
1. Introduction
2. Experimental details
3. Results and discussion
4. Conclusion
References
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