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We studied the effect of nitrogen plasma treatment on the indium-tin-oxide thin films. By monitoring the in-situ optical emission spectra during the capacitively coupled plasma treatments, we investigated the populations and the energies of the nitrogen plasma species. In particular, the nitrogen plasma consisting of excited neutral and ionic molecular species was studied and found to depend on the nitrogen flow. After the nitrogen plasma treatment, the optical band gap of the indiumtin oxide thin films was reduced, and their resistance was increased. Interestingly, when the energy of the excited neutral molecular series became higher, the band tails increased but the sheet resistance was suppressed. We believe that co-generations of nitrogen doping species and oxygen vacancies by an energetic plasma were responsible for these results.
목차
I. INTRODUCTION
II. EXPERIMENTAL METHODS
III. RESULTS
IV. CONCLUSION
REFERENCES
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