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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한국진공학회(ASCT) Applied Science and Convergence Technology Applied Science and Convergence Technology Vol.33 No.4
- 발행연도
- 2024.7
- 수록면
- 100 - 103 (4page)
이용수
초록· 키워드
오류제보하기
Ovonic threshold switch (OTS) selectors are promising devices to suppress leakage current of emerging memories in a cross-point architecture. In this study, enhanced OTS selector performance by nitrogen doping on amorphous SiTe chalcogenide was analyzed by focusing on the subthreshold region with different temperatures. The parameters of trap states including effective trap density, inter-trap distance, and activation energy are known to govern the subthreshold behaviors of amorphous chalcogenides. The parameters derived from a trap limited Poole-Frenkel based conduction model and Arrhenius plot closely correlate with the nitrogen doping effect on SiTe. Increased inter-trap distance, lowered trap density, and raised activation energy by N doping hamper electron hopping through trap states, thereby suppressing the leakage current.
목차
ABSTRACT
1. Introduction
2. Experimental details
3. Results and discussion
4. Conclusions
References
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