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논문 기본 정보

자료유형
학술저널
저자정보
Pete Sihyun Lee (Morgan Advanced Materials) Hee-Jun Lee (Morgan Advanced Materials) 김현미 (한양대학교) 김성훈 (한양대학교) 박재화 (한양대학교) 심광보 (한양대학교)
저널정보
한양대학교 세라믹공정연구센터 Journal of Ceramic Processing Research Journal of Ceramic Processing Research 제17권 제7호
발행연도
2016.7
수록면
782 - 788 (7page)

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CVD grown silicon carbide is ideal performance material for silicon wafer processing. It outperforms conventional forms ofsilicon carbide, as well as other ceramics, quartz, and metals. The combination of excellent thermal, electrical, and chemicalproperties makes this material well-suited to applications for RTP, epi, etch, implant, and across various industries where ahigh performance material requires. CVD SiC ceramics are brittle and sensitive to flaws. As a result, the structural integrityof ceramic component may be seriously affected. Crack- healing ability of CVD SiC ceramics is a very useful technology forhigher structural integrity and for reducing the machining and non-destructive inspection costs. This study focuses on CVDSiC ceramic performance and its crack-healing behaviors were investigated as a function of crack-healing temperature, time,size, and temperature dependence of the resultant bending strength. Three-point bending specimens were made and a semiellipticalcrack was introduced on the specimen by a Vickers indenter. Pre-cracked specimens were healed at varioustemperature conditions. The main conclusions were: (1) CVD grown SiC has cubic β? structure, it offers isotropiccharacteristics. (2) Optimized crack-healing condition is; temperature: 1500 oC, 1 hr in air. (3) The bending strength isincreased as testing temperature increased, means the material can be safely used up to a temperature of 1500 oC with a goodretention of thermal and mechanical properties.

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