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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한국전자파학회JEES Journal of Electromagnetic Engineering And Science Journal of Electromagnetic Engineering And Science Vol.23 No.2
- 발행연도
- 2023.3
- 수록면
- 21 - 28 (8page)
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This article presents fully integrated 39-GHz bidirectional up- and down-conversion mixers for 5G millimeter-wave (mmWave) applications. Fabricated in a 65-nm CMOS process with a 1.2-V supply voltage, the up- and down-conversion mixers consume 39 and 43 mW, respectively. For 5G time-division duplexing (TDD) operation, intermediate-frequency (IF)/local-oscillator (LO)/radio-frequency (RF) T/R switches are introduced. For better isolation and low insertion loss between the up- and down-conversion mixer, a series-shunt singlepole double-throw (SPDT) structure and an equivalent lumped λ/4 transmission line are proposed for IF and RF T/R switches, respectively. To realize compact area and wide bandwidth, a transformer-based matching network is adopted in this design. Targeting multi-channel phased array applications, the measurement result shows that the up-conversion mixer achieves a 2.5-dB peak conversion gain with 6.5 GHz 3-dB bandwidth. Including the insertion loss of the switch and IF signal routing, at the maximum gain of 36.5 GHz, the up-conversion mixer achieves an output 1-dB gain compression point (OP1dB) of 2.5 dBm. urthermore, the down-conversion mixer achieves a 5-dB peak conversion gain with a 9.7-GHz 3-dB bandwidth.
목차
Abstract
Ⅰ. INTRODUCTION
Ⅱ. SYSTEM ANALYSIS AND DESIGN
Ⅲ. IMPLEMENTATION AND MEASUREMENT RESULTS
Ⅳ. CONCLUSION
REFERENCES
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