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The two-dimensional(2D) materials, including graphene, h-BN, layered transition metal?chalcogenides (TMC) and layered transition metal-dichalcogenides(TMDCs) are the next generation of the opto-electronic devices. In this paper, we report on the opto-electronic properties of back-gated field effect transistor(FET) based on ∼ 200 layered ReSe2 at before and after annealing. After the annealing, the transition from schottky to ohmic contact in the Ti electrodes and ReSe2 was observed, and the external quantum efficiency (EQE) of the ReSe2 device was by increased 10% due to the improvement of the contact resistance between the electrodes and ReSe2. We obtained an EQE of 18.8% and 8.2% using 532 nm laser excitation, and ReSe2 device is a good candidate for 2D material based ultra-thin opto-electronic device applications.
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참고문헌 (19)
참고문헌 신청
Novoselov, K. S. / 2012 / Ko, L. Colombo, PR Gellert, MG Schwab and K. Kim / Nature 490(7419):192~200
Novoselov, Kostya S. / 2004 / Electric field effect in atomically thin carbon films / science 306(5696):666~669
Wang, Qing Hua / 2012 / Electronics and optoelectronics of two-dimensional transition metal dichalcogenides / Nature nanotechnology 7(11):699~712
Yun, Won Seok / 2012 / Thickness and strain effects on electronic structures of transition metal dichalcogenides: 2H-MX2 semiconductors (M= Mo, W; X= S, Se, Te) / Physical Review B 85(3):033305
Geim, Andre K. / 2013 / Van der Waals heterostructures / Nature 499(7459):419~425
Novoselov, Kostya S. / 2004 / Electric field effect in atomically thin carbon films / science 306(5696):666~669
Wang, Qing Hua / 2012 / Electronics and optoelectronics of two-dimensional transition metal dichalcogenides / Nature nanotechnology 7(11):699~712
Yun, Won Seok / 2012 / Thickness and strain effects on electronic structures of transition metal dichalcogenides: 2H-MX2 semiconductors (M= Mo, W; X= S, Se, Te) / Physical Review B 85(3):033305
Geim, Andre K. / 2013 / Van der Waals heterostructures / Nature 499(7459):419~425
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